ISC300N20NM6ATMA1 vs ISC045N03L5SATMA1 Comparison

Detailed side-by-side comparison of ISC300N20NM6ATMA1 by Infineon and ISC045N03L5SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC300N20NM6ATMA1

ISC300N20NM6ATMA1 - 200V 44A OptiMOS 6 N-Channel MOSFET | Infineon

ISC300N20NM6ATMA1 βœ“ Active

Specification Comparison

Parameter ISC300N20NM6ATMA1 ISC045N03L5SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.15 $0.51
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 200V β€”
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 200 V 30 V
Continuous Drain Current (ID) at TC 44 A β€”
Continuous Drain Current (ID) at Ta 6.5 A β€”
Power Dissipation (PD) at TC 136 W β€”
Power Dissipation (PD) at Ta 3 W β€”
Drain-Source On-Resistance (RDS(on)) 27 mΞ© (typical) β€”
Gate Threshold Voltage (VGS(th)) 4.5 V β€”
Package PG-TDSON-8 SuperSO8 5x6 (PG-TDSON-8-6)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 6 OptiMOS 5 / Trench
Operating Mode Enhancement β€”
RoHS Status Compliant Compliant
Part Number β€” ISC045N03L5SATMA1
Continuous Drain Current (ID) at TA=25Β°C β€” 18 A
Continuous Drain Current (ID) at TC=25Β°C β€” 63 A
On-Resistance RDS(on) max @ VGS=10V β€” 4.5 mΞ©
Gate-Source Threshold Voltage (VGS(th)) β€” 2 V @ ID=250 Β΅A
Gate-Source Voltage (VGS) max β€” Β±20 V
Total Gate Charge (Qg) β€” 13 nC @ VGS=10 V
Input Capacitance (Ciss) β€” 870 pF @ VDS=15 V
Power Dissipation (PD) at TA=25Β°C β€” 2.5 W
Power Dissipation (PD) at TC=25Β°C β€” 30 W
Operating Temperature Range β€” -55 Β°C to +150 Β°C

Datasheets & Resources

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