ISCH57N04NM7VSCATMA1 vs ISC045N03L5SATMA1 Vergleich
Detaillierter Direktvergleich von ISCH57N04NM7VSCATMA1 von Infineon und ISC045N03L5SATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
ISCH57N04NM7VSCATMA1 - 40V 443A OptiMOS 7 Dual-Side Cooled MOSFET | Infineon
ISCH57N04NM7VSCATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | ISCH57N04NM7VSCATMA1 | ISC045N03L5SATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $0,51 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 7 (trench) | OptiMOS 5 / Trench |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Continuous Drain Current (ID) at Ta | 52 A | — |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: ID at Tc value, datasheet not in verified data] | — |
| Pulsed Drain Current (IDM) at Tc | 443 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 214 W | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | 13 nC @ VGS=10 V |
| Betriebstemperaturbereich | -55 C to +175 C (typical MOSFET junction range) | -55 °C to +150 °C |
| Gehäuse | PG-WSON-8-2 (PQFN 5x6 mm, Dual Side Cooled) | SuperSO8 5x6 (PG-TDSON-8-6) |
| Montageart | Surface Mount | Surface Mount |
| Configuration | Single N-channel, source-down lead-frame | — |
| Cooling | Dual Side Cooled (top + bottom thermal interface) | — |
| RoHS-Status | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | ISC045N03L5SATMA1 |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25°C | — | 18 A |
| Continuous Drain Current (ID) at TC=25°C | — | 63 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.5 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 2 V @ ID=250 µA |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Input Capacitance (Ciss) | — | 870 pF @ VDS=15 V |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Power Dissipation (PD) at TC=25°C | — | 30 W |