ISCH57N04NM7VSCATMA1 vs ISC045N03L5SATMA1 Comparación
Comparación detallada lado a lado de ISCH57N04NM7VSCATMA1 por Infineon y ISC045N03L5SATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
ISCH57N04NM7VSCATMA1 - 40V 443A OptiMOS 7 Dual-Side Cooled MOSFET | Infineon
ISCH57N04NM7VSCATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | ISCH57N04NM7VSCATMA1 | ISC045N03L5SATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,78 | $0,51 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 7 (trench) | OptiMOS 5 / Trench |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Continuous Drain Current (ID) at Ta | 52 A | — |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: ID at Tc value, datasheet not in verified data] | — |
| Pulsed Drain Current (IDM) at Tc | 443 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 214 W | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | 13 nC @ VGS=10 V |
| Rango de temperatura de funcionamiento | -55 C to +175 C (typical MOSFET junction range) | -55 °C to +150 °C |
| Encapsulado | PG-WSON-8-2 (PQFN 5x6 mm, Dual Side Cooled) | SuperSO8 5x6 (PG-TDSON-8-6) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Configuration | Single N-channel, source-down lead-frame | — |
| Cooling | Dual Side Cooled (top + bottom thermal interface) | — |
| Estado RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | ISC045N03L5SATMA1 |
| Tipo de transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25°C | — | 18 A |
| Continuous Drain Current (ID) at TC=25°C | — | 63 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.5 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 2 V @ ID=250 µA |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Input Capacitance (Ciss) | — | 870 pF @ VDS=15 V |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Power Dissipation (PD) at TC=25°C | — | 30 W |