ISK057N04LM6ATSA1 vs ISK057N04LM6ATLA1 Vergleich

Detaillierter Direktvergleich von ISK057N04LM6ATSA1 von Infineon und ISK057N04LM6ATLA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
ISK057N04LM6ATSA1 ISK057N04LM6ATSA1 - 40V 64A OptiMOS 6 N-MOSFET PG-VSON-6-1

ISK057N04LM6ATSA1 - 40V 64A OptiMOS 6 N-MOSFET PG-VSON-6-1

ISK057N04LM6ATSA1 ✓ Aktiv
Infineon
ISK057N04LM6ATLA1 ISK057N04LM6ATLA1 - 40V 64A OptiMOS 6 N-MOSFET | Infineon

ISK057N04LM6ATLA1 - 40V 64A OptiMOS 6 N-MOSFET | Infineon

ISK057N04LM6ATLA1 ✓ Aktiv

Spezifikationsvergleich

Parameter ISK057N04LM6ATSA1 ISK057N04LM6ATLA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,30 $0,52
Polarity N-Channel —
Drain-Source Voltage (VDS) 40 V —
Gate-Source Voltage (VGS) Max ±20 V —
Continuous Drain Current (ID) at Ta=25C 15 A —
Continuous Drain Current (ID) at Tc=25C 64 A —
Power Dissipation (PD) at Ta 2.1 W —
Power Dissipation (PD) at Tc 39.1 W —
On-Resistance RDS(on) at VGS=10V [DATA_NEEDED: typical RDS(on) at 10V] —
On-Resistance RDS(on) at VGS=4.5V 8.3 mOhm —
Gate Threshold Voltage (VGS(th)) 2.3 V (typ) [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) at VGS=10V 12 nC —
Input Capacitance (Ciss) 870 pF [DATA_NEEDED: Ciss]
Output Capacitance (Coss) 290 pF —
Reverse Transfer Capacitance (Crss) 21 pF —
Betriebstemperaturbereich -55C to +150C -55 °C to +150 °C
Gehäuse PG-VSON-6-1 (PQFN 2x2 mm) —
Montageart Surface Mount Surface Mount
RoHS-Status Compliant Compliant
Technology OptiMOS 6 Trench Trench (OptiMOS 6)
Manufacturer — Infineon Technologies
Series — OptiMOS 6
Transistortyp — N-Channel MOSFET
Drain-to-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at Tc — 64 A
Continuous Drain Current (ID) at Ta — [DATA_NEEDED: ID at TA=25C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
RDS(on) max at VGS=10V — [DATA_NEEDED: RDS(on) max]
RDS(on) typical at VGS=10V — 5.7 mΩ
Gate Charge (Qg total) — [DATA_NEEDED: Qg total]
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 39.1 W
Gehäuse / Bauform — PG-VSON-6-1 (PQFN 2x2)
MSL-Level — 1
Packaging — Tape & Reel (TR)
DigiKey Part Number — 448-ISK057N04LM6ATLA1TR-ND

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