ISK057N04LM6ATSA1 vs ISK057N04LM6ATLA1 Comparação

Comparação detalhada lado a lado de ISK057N04LM6ATSA1 por Infineon e ISK057N04LM6ATLA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Infineon
ISK057N04LM6ATSA1 ISK057N04LM6ATSA1 - 40V 64A OptiMOS 6 N-MOSFET PG-VSON-6-1

ISK057N04LM6ATSA1 - 40V 64A OptiMOS 6 N-MOSFET PG-VSON-6-1

ISK057N04LM6ATSA1 ✓ Ativo
Infineon
ISK057N04LM6ATLA1 ISK057N04LM6ATLA1 - 40V 64A OptiMOS 6 N-MOSFET | Infineon

ISK057N04LM6ATLA1 - 40V 64A OptiMOS 6 N-MOSFET | Infineon

ISK057N04LM6ATLA1 ✓ Ativo

Comparação de especificações

Parâmetro ISK057N04LM6ATSA1 ISK057N04LM6ATLA1
Marca Infineon Infineon
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $0,30 $0,52
Polarity N-Channel —
Drain-Source Voltage (VDS) 40 V —
Gate-Source Voltage (VGS) Max ±20 V —
Continuous Drain Current (ID) at Ta=25C 15 A —
Continuous Drain Current (ID) at Tc=25C 64 A —
Power Dissipation (PD) at Ta 2.1 W —
Power Dissipation (PD) at Tc 39.1 W —
On-Resistance RDS(on) at VGS=10V [DATA_NEEDED: typical RDS(on) at 10V] —
On-Resistance RDS(on) at VGS=4.5V 8.3 mOhm —
Gate Threshold Voltage (VGS(th)) 2.3 V (typ) [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) at VGS=10V 12 nC —
Input Capacitance (Ciss) 870 pF [DATA_NEEDED: Ciss]
Output Capacitance (Coss) 290 pF —
Reverse Transfer Capacitance (Crss) 21 pF —
Faixa de temperatura de operação -55C to +150C -55 °C to +150 °C
Encapsulamento PG-VSON-6-1 (PQFN 2x2 mm) —
Tipo de montagem Surface Mount Surface Mount
Status RoHS Compliant Compliant
Technology OptiMOS 6 Trench Trench (OptiMOS 6)
Manufacturer — Infineon Technologies
Series — OptiMOS 6
Tipo de transistor — N-Channel MOSFET
Drain-to-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at Tc — 64 A
Continuous Drain Current (ID) at Ta — [DATA_NEEDED: ID at TA=25C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
RDS(on) max at VGS=10V — [DATA_NEEDED: RDS(on) max]
RDS(on) typical at VGS=10V — 5.7 mΩ
Gate Charge (Qg total) — [DATA_NEEDED: Qg total]
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 39.1 W
Encapsulamento / Caixa — PG-VSON-6-1 (PQFN 2x2)
Nível MSL — 1
Packaging — Tape & Reel (TR)
DigiKey Part Number — 448-ISK057N04LM6ATLA1TR-ND

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