ISO122JPE4 vs ISO122P Vergleich

Detaillierter Direktvergleich von ISO122JPE4 von Texas Instruments und ISO122P von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter ISO122JPE4 ISO122P
Marke Texas Instruments Texas Instruments
Kategorie Amplifier ICs Amplifier ICs
Lebenszyklusstatus Aktiv Aktiv
Product Type Precision isolation amplifier Precision isolation amplifier
Number of Amplifier Channels 1 circuit —
Input Signal Range 50 mV —
Bandwidth 50 kHz —
Isolation Voltage 1.5 kV —
Supply Voltage Range 4.5 V to 18 V —
Gehäuse 8-PDIP (16-DIP mechanical outline, 8 leads) —
Montageart Through-hole Through-hole
Isolation Technology Duty-cycle modulation-demodulation —
Isolation Barrier 2 pF differential capacitive barrier —
Signal Transmission Across Barrier Digital —
Betriebstemperaturbereich [DATA_NEEDED: operating temperature range] —
Input Offset Voltage [DATA_NEEDED: input offset voltage] —
Gain Error [DATA_NEEDED: gain error] —
Isolation Mode [DATA_NEEDED: isolation mode] —
RoHS-Status [DATA_NEEDED: RoHS status] —
REACH Status [DATA_NEEDED: REACH status] —
AEC-Q100 Qualification not_applicable —
Number of Circuits — 1 circuit
Maximum Nonlinearity — 0.020%
Signal Bandwidth — 50 kHz
Input Offset-Voltage Drift — 200 V/°C maximum
Power Supply Range — 4.5 V to 18 V
VS1 Quiescent Current — 5 mA
VS2 Quiescent Current — ±5.5 mA
Bipolar Supply Operation — ±10 V
High-Voltage Breakdown Rating — 1500 Vrms
Isolation Method — Duty-cycle modulation and demodulation
Differential Capacitive Barrier — 2 pF
Gain Configuration — Fixed unity gain
ISO122P Package — 8-pin plastic DIP
Single-Supply Operation — Supported on the high-voltage side with a 5.1 V Zener-generated negative supply
High-Voltage Testing — 100% tested for rated high-voltage breakdown

Datenblätter & Ressourcen

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