ISZ025N06NM6ATMA1 vs ISC015N06NM5ATMA1 Vergleich
Detaillierter Direktvergleich von ISZ025N06NM6ATMA1 von Infineon und ISC015N06NM5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
ISZ025N06NM6ATMA1 - 60V 137A OptiMOS 6 N-Channel MOSFET | Infineon
ISZ025N06NM6ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | ISZ025N06NM6ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,02 | $0,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60 V | OptiMOS 5 |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 137 A | — |
| Continuous Drain Current (ID, Ta) | 22 A | — |
| Maximum RDS(on) at VGS=10V | 2.5 mΩ | — |
| Gate Threshold Voltage (VGS(th), typ) | 3.3 V | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 100 W | — |
| Gehäuse | PG-TSDSON-8-34 (5x6 mm) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 °C to +175 °C | -55 C to +175 C |
| Gate Drive Voltage (VGS) | ±20 V max | — |
| Technology | Trench MOSFET | Trench MOSFET (OptiMOS 5) |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | [DATA_NEEDED: MSL moisture sensitivity level] | — |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | — | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | — | 1.5 mOhm |
| Total Power Dissipation (TA) | — | 3 W |
| Total Power Dissipation (TC) | — | 188 W |
| MSL (Moisture Sensitivity Level) | — | 1 |