ISZ025N06NM6ATMA1 vs ISC015N06NM5ATMA1 Comparison
Detailed side-by-side comparison of ISZ025N06NM6ATMA1 by Infineon and ISC015N06NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ025N06NM6ATMA1
ISZ025N06NM6ATMA1 - 60V 137A OptiMOS 6 N-Channel MOSFET | Infineon
ISZ025N06NM6ATMA1 β Active
Specification Comparison
| Parameter | ISZ025N06NM6ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.02 | $0.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60 V | OptiMOS 5 |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID, Tc=25Β°C) | 137 A | β |
| Continuous Drain Current (ID, Ta) | 22 A | β |
| Maximum RDS(on) at VGS=10V | 2.5 mΞ© | β |
| Gate Threshold Voltage (VGS(th), typ) | 3.3 V | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 100 W | β |
| Package | PG-TSDSON-8-34 (5x6 mm) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +175 Β°C | -55 C to +175 C |
| Gate Drive Voltage (VGS) | Β±20 V max | β |
| Technology | Trench MOSFET | Trench MOSFET (OptiMOS 5) |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL moisture sensitivity level] | β |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TA=25C | β | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | β | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | β | 1.5 mOhm |
| Total Power Dissipation (TA) | β | 3 W |
| Total Power Dissipation (TC) | β | 188 W |
| MSL (Moisture Sensitivity Level) | β | 1 |