ISZ033N03LF2SATMA1 vs BSC0921NDIATMA1 Vergleich

Detaillierter Direktvergleich von ISZ033N03LF2SATMA1 von Infineon und BSC0921NDIATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter ISZ033N03LF2SATMA1 BSC0921NDIATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,68 $0,68
FET Type N-Channel —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at TA=25C 20 A —
Continuous Drain Current (ID) at TC=25C 109 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 31 A (per channel, package-limited)
Power Dissipation (PD) at TA=25C 3 W —
Power Dissipation (PD) at TC=25C 71 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 2.35 V max @ 30 uA —
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at 10V VGS] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Betriebs-Sperrschichttemperatur -55 C to +175 C —
Gehäuse PG-TSDSON-8 FL (8-pin) PG-TISON-8 (8-pin, exposed pad)
Montageart Surface Mount Surface Mount
Technology OptiMOS 5 OptiMOS 25V (N-channel)
RoHS-Status Compliant Compliant
Manufacturer — Infineon Technologies
Configuration — Dual N-Channel MOSFET Array
Continuous Drain Current (ID) — 17 A (per channel)
Total Power Dissipation (PD) — 1 W
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V/4.5V]
Gate Charge (Qg) — Ultra-low (OptiMOS 25V family characteristic)
Output Charge (Qoss) — Ultra-low (OptiMOS 25V family characteristic)
Betriebstemperatur — -55C to +150C (junction)
MSL-Level — 1 (per Infineon OptiMOS family)
Primary Application — Synchronous buck converters, VRMs, POL regulators

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