ISZ033N03LF2SATMA1 vs ISZ056N03LF2SATMA1 Vergleich
Detaillierter Direktvergleich von ISZ033N03LF2SATMA1 von Infineon und ISZ056N03LF2SATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ056N03LF2SATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | ISZ033N03LF2SATMA1 | ISZ056N03LF2SATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,68 | $0,49 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 20 A | — |
| Continuous Drain Current (ID) at TC=25C | 109 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TA=25C | 3 W | — |
| Power Dissipation (PD) at TC=25C | 71 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | [DATA_NEEDED: gate-source voltage max] |
| Gate Threshold Voltage (VGS(th)) | 2.35 V max @ 30 uA | 2.35 V (typ) |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at 10V VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | [DATA_NEEDED: total gate charge] |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | — |
| Gehäuse | PG-TSDSON-8 FL (8-pin) | PG-TSDSON-8 (PQFN 3.3x3.3 mm) |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 | — |
| RoHS-Status | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | StrongIRFET 2 |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 16 A |
| Continuous Drain Current (ID) at Tc | — | 72 A |
| On-Resistance (RDS(on)) max at VGS=10V | — | 5.6 mOhm |
| On-Resistance (RDS(on)) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 52 W |
| Betriebstemperaturbereich | — | -55 C to +175 C |