ISZ033N03LF2SATMA1 vs ISZ056N03LF2SATMA1 Сравнение
Подробное сравнение бок о бок ISZ033N03LF2SATMA1 от Infineon и ISZ056N03LF2SATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
ISZ033N03LF2SATMA1 - 30V 109A N-Ch OptiMOS 5 MOSFET | Infineon
ISZ033N03LF2SATMA1 ✓ АктивенInfineon
ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ056N03LF2SATMA1 ✓ АктивенСравнение характеристик
| Параметр | ISZ033N03LF2SATMA1 | ISZ056N03LF2SATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,68 | $0,49 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 20 A | — |
| Continuous Drain Current (ID) at TC=25C | 109 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TA=25C | 3 W | — |
| Power Dissipation (PD) at TC=25C | 71 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | [DATA_NEEDED: gate-source voltage max] |
| Gate Threshold Voltage (VGS(th)) | 2.35 V max @ 30 uA | 2.35 V (typ) |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at 10V VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | [DATA_NEEDED: total gate charge] |
| Рабочая температура перехода | -55 C to +175 C | — |
| Корпус | PG-TSDSON-8 FL (8-pin) | PG-TSDSON-8 (PQFN 3.3x3.3 mm) |
| Тип монтажа | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 | — |
| Статус RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | StrongIRFET 2 |
| Тип транзистора | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 16 A |
| Continuous Drain Current (ID) at Tc | — | 72 A |
| On-Resistance (RDS(on)) max at VGS=10V | — | 5.6 mOhm |
| On-Resistance (RDS(on)) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 52 W |
| Диапазон рабочих температур | — | -55 C to +175 C |