ISZ072N06NM6ATMA1 vs IQE018N06NM6SCATMA1 Vergleich
Detaillierter Direktvergleich von ISZ072N06NM6ATMA1 von Infineon und IQE018N06NM6SCATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISZ072N06NM6ATMA1 | IQE018N06NM6SCATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,38 | $0,98 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60V | — |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 57 A | — |
| Continuous Drain Current (ID, Ta) | 12.7 A | — |
| RDS(on) max @ VGS=10V | 7.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V (typ) | — |
| Verlustleistung (TC=25°C) | 50 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Gehäuse | PG-TSDSON-8-34 (TSDSON-8 FL) | PG-WHSON-8-1 (5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +175C ( Tj max 175C ) | -55 °C to +175 °C (TJ) |
| Technology | OptiMOS 6 trench MOSFET | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 | — |
| Part Family | — | OptiMOS 6 60 V |
| Drain-Source Voltage (VDS) Max | — | 60 V |
| Continuous Drain Current (ID) at TA=25°C | — | 25 A |
| Continuous Drain Current (ID) at TC | — | 178 A |
| On-Resistance RDS(on) Max | — | 1.8 mΩ at VGS=10 V |
| Gate Threshold Voltage VGS(th) Typ | — | 3.3 V |
| Power Dissipation (TA) | — | 2.5 W |
| Power Dissipation (TC) | — | 125 W |
| Lead-Free | — | Yes |