ISZ072N06NM6ATMA1 vs IQE018N06NM6SCATMA1 Comparison
Detailed side-by-side comparison of ISZ072N06NM6ATMA1 by Infineon and IQE018N06NM6SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | ISZ072N06NM6ATMA1 | IQE018N06NM6SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60V | — |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 57 A | — |
| Continuous Drain Current (ID, Ta) | 12.7 A | — |
| RDS(on) max @ VGS=10V | 7.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V (typ) | — |
| Power Dissipation (TC=25°C) | 50 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Package | PG-TSDSON-8-34 (TSDSON-8 FL) | PG-WHSON-8-1 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C ( Tj max 175C ) | -55 °C to +175 °C (TJ) |
| Technology | OptiMOS 6 trench MOSFET | — |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | — |
| Part Family | — | OptiMOS 6 60 V |
| Drain-Source Voltage (VDS) Max | — | 60 V |
| Continuous Drain Current (ID) at TA=25°C | — | 25 A |
| Continuous Drain Current (ID) at TC | — | 178 A |
| On-Resistance RDS(on) Max | — | 1.8 mΩ at VGS=10 V |
| Gate Threshold Voltage VGS(th) Typ | — | 3.3 V |
| Power Dissipation (TA) | — | 2.5 W |
| Power Dissipation (TC) | — | 125 W |
| Lead-Free | — | Yes |