ISZ072N06NM6ATMA1 vs ISC009N06NM6ATMA1 Vergleich
Detaillierter Direktvergleich von ISZ072N06NM6ATMA1 von Infineon und ISC009N06NM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISZ072N06NM6ATMA1 | ISC009N06NM6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,38 | $0,68 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60V | OptiMOS 6 60 V |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 57 A | — |
| Continuous Drain Current (ID, Ta) | 12.7 A | — |
| RDS(on) max @ VGS=10V | 7.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V (typ) | — |
| Verlustleistung (TC=25°C) | 50 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Gehäuse | PG-TSDSON-8-34 (TSDSON-8 FL) | PG-TDSON-8 (3.3 x 3.3 mm) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +175C ( Tj max 175C ) | -55 °C to +175 °C |
| Technology | OptiMOS 6 trench MOSFET | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 | MSL1 (per JEDEC J-STD-020) |
| Transistortyp | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Ta=25C | — | 40 A |
| Pulsed Drain Current (IDM) at Tc=25C | — | 344 A |
| Power Dissition (PD) at Ta=25C | — | 3 W |
| Power Dissipation (PD) at Tc=25C | — | 221 W |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| RDS(on) max @ VGS=10 V | — | [DATA_NEEDED: RDS(on) typical value at VGS=10 V] |
| Gate Charge (Qg, typ) | — | [DATA_NEEDED: Qg typical value] |
| Halogenfrei | — | Yes |
| AEC-Q101 Qualification | — | [DATA_NEEDED: AEC-Q101 status] |