ISZ072N06NM6ATMA1 vs ISC009N06NM6ATMA1 Comparison
Detailed side-by-side comparison of ISZ072N06NM6ATMA1 by Infineon and ISC009N06NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | ISZ072N06NM6ATMA1 | ISC009N06NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60V | OptiMOS 6 60 V |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 57 A | — |
| Continuous Drain Current (ID, Ta) | 12.7 A | — |
| RDS(on) max @ VGS=10V | 7.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V (typ) | — |
| Power Dissipation (TC=25°C) | 50 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Package | PG-TSDSON-8-34 (TSDSON-8 FL) | PG-TDSON-8 (3.3 x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C ( Tj max 175C ) | -55 °C to +175 °C |
| Technology | OptiMOS 6 trench MOSFET | — |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | MSL1 (per JEDEC J-STD-020) |
| Transistor Type | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Ta=25C | — | 40 A |
| Pulsed Drain Current (IDM) at Tc=25C | — | 344 A |
| Power Dissition (PD) at Ta=25C | — | 3 W |
| Power Dissipation (PD) at Tc=25C | — | 221 W |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| RDS(on) max @ VGS=10 V | — | [DATA_NEEDED: RDS(on) typical value at VGS=10 V] |
| Gate Charge (Qg, typ) | — | [DATA_NEEDED: Qg typical value] |
| Halogen Free | — | Yes |
| AEC-Q101 Qualification | — | [DATA_NEEDED: AEC-Q101 status] |