K3KL1L10GM-JGCT vs K3KL2L20DM-JGCT Vergleich
Detaillierter Direktvergleich von K3KL1L10GM-JGCT von Samsung Electronics und K3KL2L20DM-JGCT von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K3KL1L10GM-JGCT | K3KL2L20DM-JGCT |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | DRAM | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $30,90 | $20,80 |
| Speichertyp | LPDDR5X DRAM (SDRAM) | LPDDR5X SDRAM |
| Density | 32 Gb (4 GB) | 48 Gb |
| Interface Organization | x64 | — |
| Datenrate | LPDDR5X-7500 (up to 7500 MT/s) | 7500 Mbps |
| Generation | LPDDR5X (premium low-power DRAM) | LPDDR5X (1.25x speed, 25% better power efficiency vs LPDDR5) |
| Speed vs Previous Generation | Up to 1.25x faster than LPDDR5 | — |
| Power Efficiency vs Previous Generation | Approximately 25% better than LPDDR5 | — |
| Gehäuse | 441-ball FBGA | 441-ball FBGA |
| Montageart | Surface Mount (soldered-down BGA) | Surface Mount |
| Application Class | AI edge devices, in-vehicle devices, flagship mobile | — |
| Versorgungsspannung | [DATA_NEEDED: VDD/VDDQ supply voltage] | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | -25C to +85C |
| Access Latency | [DATA_NEEDED: CAS latency / tRCD / tRP timings] | — |
| Refresh Rate | [DATA_NEEDED: refresh specification] | — |
| RoHS-Status | unknown | unknown |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Speicherorganisation | — | x64 |
| Supply Voltage (VDD1) | — | 1.8 V |
| Supply Voltage (VDD2) | — | 1.05 V |
| Supply Voltage (VDDQ) | — | 0.5 V |
| Core Voltage Rail | — | 0.9 V |
| Schnittstelle | — | LPDDR5X (JEDEC low-power DRAM interface) |
| Product Status | — | Mass Production |
| Application Segment | — | AI devices, automotive, mobile |