K3KL2L20DM-JGCT - 48Gb LPDDR5X 7500Mbps DRAM | Samsung
Teilenummer: K3KL2L20DM-JGCT ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $28.5 | $28,50 |
| 10 | $26.2 | $262,00 |
| 100 | $24.1 | $2.410,00 |
| 500 | $22.3 | $11.150,00 |
| 1.000 | $20.8 | $20.800,00 |
K3KL2L20DM-JGCT Übersicht
LPDDR5X is the premium tier of the low-power DRAM family defined by JEDEC. A DRAM (dynamic random access memory) stores each bit in a capacitor within a memory cell, requiring periodic refresh; the LPDDR lineage (LPDDR4 -> LPDDR4X -> LPDDR5 -> LPDDR5X) prioritizes bandwidth-per-watt for battery-powered and thermally constrained systems. Within the power-management hierarchy of a modern SoC platform, LPDDR5X sits at the top of the mobile memory stack, offering roughly 1.25x higher speed and 25% better power efficiency than the previous LPDDR5 generation.
Key features of the K3KL2L20DM-JGCT include the 7500 Mbps pin speed (targeting the LPDDR5X 7.5 Gbps speed bin), the dense 48 Gb per-die organization in x64 mode, and the fine-pitch 441-ball FBGA (fine-pitch ball grid array) surface-mount package that minimizes trace length and signal integrity degradation on the memory bus. The multi-rail power architecture (VDD1/VDD2/VDDQ domains at 1.8/1.05/0.9/0.5 V) enables aggressive dynamic voltage and frequency scaling (DVFS).
Architecturally, LPDDR5X extends LPDDR5 signaling with deeper link ECC and adaptive frequency scaling, preserving channel compatibility while pushing the interface into the multi-gigabit regime. Careful fly-by routing, on-die termination tuning, and reference voltage training are essential at 7500 Mbps.
Typical applications include AI edge accelerators and in-vehicle infotainment/ADAS platforms, as well as flagship smartphones, tablets, and networking equipment where memory bandwidth per watt is a primary design constraint. According to distributor listings, the part is described as a 48 Gb low-power DRAM for AI and in-vehicle devices.
A key design consideration: at 7.5 Gbps, PCB stackup, length matching, and power-integrity of the 0.5 V VDDQ rail dominate system margin - budget for comprehensive signal-integrity simulation and eye-diagram validation.
This page synthesizes distributor stock and pricing signals, same-family drop-in variants, and practical LPDDR5X design notes not found in the manufacturer datasheet.
Drop-in-Alternativen für K3KL2L20DM-JGCT – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit K3KL2L20DM-JGCT (gleiche Bauform und Footprint) – abweichend in Density, Memory Type, Package, Application Class, Interface.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
K3KL3L30CM-BGCT
✅ Drop-In✓ Auf Lager
Preis auf Anfrage
Datenblatt ansehen →K3LK4L40DM-BGCT
✅ Drop-In✓ Auf Lager
$40.5 / Stück
Datenblatt ansehen →K3LK8L80CM-MGCT
✅ Drop-In✓ Auf Lager
Preis auf Anfrage
Datenblatt ansehen →K3KL7L70EM-MGCU
✅ Drop-In✓ Auf Lager
$12 / Stück
Datenblatt ansehen →K3KL1L10GM-JGCT
✅ Drop-In✓ Auf Lager
$30.9 / Stück
Datenblatt ansehen →K3KL2L20DM-JGCT Grenzwerte & elektrische Eigenschaften
| Speichertyp | LPDDR5X SDRAM |
| Density | 48 Gb |
| Speicherorganisation | x64 |
| Datenrate | 7500 Mbps |
| Supply Voltage (VDD1) | 1.8 V |
| Supply Voltage (VDD2) | 1.05 V |
| Supply Voltage (VDDQ) | 0.5 V |
| Core Voltage Rail | 0.9 V |
| Betriebstemperatur | -25C to +85C |
| Gehäuse | 441-ball FBGA |
| Montageart | Surface Mount |
| Schnittstelle | LPDDR5X (JEDEC low-power DRAM interface) |
| Product Status | Mass Production |
| Generation | LPDDR5X (1.25x speed, 25% better power efficiency vs LPDDR5) |
| Application Segment | AI devices, automotive, mobile |
| RoHS-Status | unknown |
K3KL2L20DM-JGCT 441-ball fbga Pinbelegungsleitfaden
Pinbelegung für K3KL2L20DM-JGCT (441-ball fbga-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.
Keine detaillierten Pinbelegungsdaten verfügbar für K3KL2L20DM-JGCT.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
K3KL2L20DM-JGCT ist geeignet für 6 Anwendungs: On-Device AI Inference, Automotive In-Vehicle Infotainment, Flagship Smartphones and Tablets, Networking and Data Center Edge Equipment, ADAS Sensor Fusion Platforms, High-Performance Mobile Computing (Notebooks/Copilot PCs).
On-Device AI Inference
The K3KL2L20DM-JGCT's 48 Gb density and 7500 Mbps data rate make it a strong main-memory choice for edge AI accelerators running large transformer or CNN models. Its x64 organization feeds wide memory channels, and the 0.5 V VDDQ rail keeps energy per bit low - LPDDR5X delivers roughly 1.25x the bandwidth and 25% better power efficiency of LPDDR5, which directly reduces joules per inference. Placed on short fly-by-routed channels to an AI SoC with on-die termination, the device sustains multi-Gbps signaling; the main trade-off is that power-integrity of the 0.5 V rail at 7.5 Gbps demands careful PDN design and eye-margin validation during bring-up.
Empfohlen
Automotive In-Vehicle Infotainment
Distributor data explicitly targets this 48 Gb LPDDR5X at in-vehicle devices. The -25C to +85C operating range suits cabin environments in IVI head units and digital cockpit SoCs that need high bandwidth for multi-display graphics and surround-view camera fusion. The 441-ball FBGA keeps the memory physically close to the host processor, shortening high-speed traces that must survive automotive thermal cycling. Designers should confirm the correct automotive ordering variant and AEC-aligned screening with Samsung, and plan PDN filtering for the noisy cabin power environment where load-dump transients and conducted emissions challenge the 1.8 V and 1.05 V rails.
Empfohlen
Flagship Smartphones and Tablets
LPDDR5X was developed for flagship mobile devices, and the K3KL2L20DM-JGCT's combination of 48 Gb capacity, x64 organization, and 7500 Mbps pin speed supports the multitasking, 8K video capture, and on-device AI workloads of premium smartphones. The multi-rail architecture (1.8/1.05/0.9/0.5 V) enables the SoC's DVFS governor to scale memory frequency and voltage with workload, preserving battery life - the 25% efficiency improvement over LPDDR5 is a direct battery-life gain. The 441-ball FBGA package fits the dense PoP-adjacent layouts of mobile PCBs; compact stacked-die routing requires strict length matching and reference-plane discipline to close timing at 7.5 Gbps.
Empfohlen
Networking and Data Center Edge Equipment
High-throughput network processing - smart NICs, edge gateways, and 5G baseband cards - benefits from the K3KL2L20DM-JGCT's bandwidth density. The 7500 Mbps interface feeds packet-buffer and descriptor workloads that saturate lower-speed LPDDR4X memories, while the 48 Gb density provides deep buffering for burst absorption. Because these platforms often run sustained traffic, thermal design matters: the -25C to +85C range covers telecom ambient conditions, but airflow and heatspreader strategy must keep junction temperature within limits at full bandwidth. Multi-channel configurations using several x64 devices per controller let designers scale aggregate bandwidth linearly with channel count while sharing one DRAM training profile.
Empfohlen
ADAS Sensor Fusion Platforms
Advanced driver assistance systems fuse camera, radar, and lidar streams that must be buffered at high aggregate rates before processing - exactly the workload profile of a 7500 Mbps, 48 Gb LPDDR5X. The K3KL2L20DM-JGCT gives ADAS SoCs the bandwidth headroom to keep frame buffers and neural-network activations on-chip-adjacent, minimizing latency. The 441-ball FBGA mounting allows tight placement to the processor for signal integrity under vehicular vibration, and the -25C floor covers cold-soak conditions. Safety-relevant designs should pair the memory with link ECC enabled and verify functional-safety diagnostics coverage per the platform's ISO 26262 development argument with Samsung documentation.
Empfohlen
High-Performance Mobile Computing (Notebooks/Copilot PCs)
Thin-and-light notebooks with integrated AI accelerators increasingly adopt LPDDR5X as soldered-down main memory. The K3KL2L20DM-JGCT's 48 Gb density supports 8 GB-per-device class configurations when organized across channels, and its 7500 Mbps rate keeps integrated graphics and NPU workloads fed without switching to power-hungry discrete memory subsystems. The 0.5 V VDDQ and adaptive frequency scaling deliver strong battery life under mixed office workloads. Design considerations include comprehensive signal-integrity simulation of the fly-by topology, careful package-escape planning in the 441-ball FBGA footprint, and PDN decoupling of the 1.05 V and 0.5 V rails near each ball cluster to suppress di/dt droop during burst traffic.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für K3KL2L20DM-JGCT – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | K3KL3L30CM-BGCT | K3LK4L40DM-BGCT | K3LK8L80CM-MGCT | K3KL7L70EM-MGCU |
|---|---|---|---|---|---|
| Package | 441-ball FBGA | 441-ball FBGA - same | 441-ball FBGA - same | 441-ball FBGA - same | 441-ball FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Generation | LPDDR5X | LPDDR5X | LPDDR5X | LPDDR5X family | LPDDR5X |
| Supply Rails | 1.8 / 1.05 / 0.9 / 0.5 V | 1.8 / 1.05 / 0.9 / 0.5 V (LPDDR5X standard) | 1.8 / 1.05 / 0.9 / 0.5 V (LPDDR5X standard) | 1.8 / 1.05 / 0.9 / 0.5 V (LPDDR5X standard) | 1.8 / 1.05 / 0.9 / 0.5 V (LPDDR5X standard) |
Wichtigste Unterscheidungsmerkmale
- LPDDR5X speed class with 7500 Mbps pin rate (vs. K3KL1L10GM-JGCT)
- 48 Gb single-component density in x64 organization (vs. K3KL3L30CM-BGCT)
- Automotive-adjacent operating range for AI-class memory (vs. K3LK8L80CM-MGCT)
Designhinweise
At 7500 Mbps, LPDDR5X signaling leaves minimal eye margin. Route CA and DQ buses as fly-by/point-to-point topologies with controlled impedance, keep length mismatch within the SoC vendor's spec (typically a few mils per inch class matching), and reserve solid reference planes beneath every high-speed layer. Plan for full read/write leveling and VrefDQ training in the boot firmware, and validate with eye-diagram capture at temperature extremes (-25C and +85C) before locking the PCB stackup.
The K3KL2L20DM-JGCT requires four rails: 1.8 V (VDD1), 1.05 V (VDD2), 0.9 V (core), and 0.5 V (VDDQ). The 0.5 V VDDQ rail carries high transient currents at burst data rates - size the point-of-load converter (e.g., a buck such as the TPS54218 class) for peak di/dt and place bulk plus high-frequency ceramic decoupling within millimeters of the FBGA ball clusters. Follow the SoC vendor's power-up sequencing table between VDD1, VDD2, and VDDQ to avoid latch-up or excess leakage during boot.
A frequent LPDDR5X integration error is assuming any same-package LPDDR part is interchangeable: density, organization (x64), speed bin, and temperature suffix all differ across K3KL/K3LK order codes, and the SoC boot code must carry matching memory-training data for the exact installed component. Another pitfall is treating the -25C to +85C range as automotive qualification - confirm the correct screened ordering variant with Samsung for vehicular programs before release to production.
Compliance-Informationen
No compliance statements were present in the provided web data. Samsung consumer/mobile DRAM is typically RoHS compliant, but this must be confirmed from the official Samsung product page or certificate before use.
