K3KL2L20DM-JGCT vs K3KL9L90DM-JGCT Vergleich
Detaillierter Direktvergleich von K3KL2L20DM-JGCT von Samsung Electronics und K3KL9L90DM-JGCT von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K3KL9L90DM-JGCT - LPDDR5X DRAM 16Gbit FBGA-315 | Samsung
K3KL9L90DM-JGCT ✓ AktivSpezifikationsvergleich
| Parameter | K3KL2L20DM-JGCT | K3KL9L90DM-JGCT |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $20,80 | $65,18 |
| Speichertyp | LPDDR5X SDRAM | LPDDR5X SDRAM |
| Density | 48 Gb | 16 Gbit |
| Speicherorganisation | x64 | [DATA_NEEDED: x organization] |
| Datenrate | 7500 Mbps | [DATA_NEEDED: data rate for JGCT speed grade] |
| Supply Voltage (VDD1) | 1.8 V | — |
| Supply Voltage (VDD2) | 1.05 V | — |
| Supply Voltage (VDDQ) | 0.5 V | — |
| Core Voltage Rail | 0.9 V | — |
| Betriebstemperatur | -25C to +85C | -25C to +85C |
| Gehäuse | 441-ball FBGA | FBGA-315 |
| Montageart | Surface Mount | Surface Mount |
| Schnittstelle | LPDDR5X (JEDEC low-power DRAM interface) | [DATA_NEEDED: channel configuration] |
| Product Status | Mass Production | — |
| Generation | LPDDR5X (1.25x speed, 25% better power efficiency vs LPDDR5) | — |
| Application Segment | AI devices, automotive, mobile | — |
| RoHS-Status | unknown | Compliant |
| Supply Voltage (VDD) | — | [DATA_NEEDED: core supply voltage] |
| I/O Voltage (VDDQ) | — | [DATA_NEEDED: I/O supply voltage] |
| Bank Architecture | — | [DATA_NEEDED: bank/group configuration] |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |
| Package Dimensions | — | [DATA_NEEDED: body dimensions] |
| AEC-Q100 | — | [DATA_NEEDED: automotive qualification status] |