K3KL7L70EM-MGCU vs K3KL8L80CM-MGCT Vergleich
Detaillierter Direktvergleich von K3KL7L70EM-MGCU von Samsung Electronics und K3KL8L80CM-MGCT von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K3KL7L70EM-MGCU | K3KL8L80CM-MGCT |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | DRAM |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $12,00 | $0,00 |
| Speichertyp | LPDDR5X SDRAM | LPDDR5X SDRAM |
| Density | 12 Gbit | 32 Gbit (4 GB) |
| Speicherorganisation | x32 | x32 |
| Gehäuse | 315-ball FBGA | 315-ball FBGA |
| Montageart | Surface Mount (BGA) | Surface Mount |
| Product Status | Mass Production | — |
| Schnittstelle | LPDDR5X | LPDDR5X (JEDEC LPDDR5 extension) |
| Manufacturer | Samsung Semiconductor | — |
| Supply Voltage (Core) | [DATA_NEEDED: core supply voltage] | — |
| Datenrate | [DATA_NEEDED: data rate in Mbps/pin] | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | -25C to +85C |
| Refresh | Self-refresh supported (per LPDDR5X family) | — |
| Power Modes | Deep sleep, self refresh, power down (per LPDDR5X family) | — |
| Fab Location | Johor, Malaysia (listed by distributor) | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant (per JLCPCB listing) |
| Max Data Rate | — | 7500 Mbps |
| Clock Frequency | — | 3750 MHz |
| Core Supply Voltage (VDD) | — | 1.05 V |
| I/O Supply Voltage (VDDQ) | — | 900 mV (500 mV low-power mode) |
| VDD2 Supply Voltage | — | 1.8 V |
| Application Segment | — | Mobile, Automotive, On-device AI, PC |
| Power Efficiency | — | ~20-25% improvement vs LPDDR5 (per Samsung) |
| MSL-Level | — | [DATA_NEEDED: MSL Level] |