K3KLALA0DM-JGCT vs K3KL2L20DM-JGCT Vergleich
Detaillierter Direktvergleich von K3KLALA0DM-JGCT von Samsung Electronics und K3KL2L20DM-JGCT von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K3KLALA0DM-JGCT - LPDDR5X DRAM x32 | Samsung Semiconductor
K3KLALA0DM-JGCT ✓ Aktiv
Spezifikationsvergleich
| Parameter | K3KLALA0DM-JGCT | K3KL2L20DM-JGCT |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $20,80 |
| Manufacturer | Samsung Electronics | — |
| Speichertyp | LPDDR5X SDRAM | LPDDR5X SDRAM |
| Speicherorganisation | x32 | x64 |
| Product Status | Mass Production | Mass Production |
| Family Max Data Rate | Up to 8.5 Gbps (LPDDR5X family) | — |
| Family Power Efficiency | Approx. 20% better than LPDDR5 | — |
| Family Max Density | Up to 64 GB (family) | — |
| Density | [DATA_NEEDED: density per die] | 48 Gb |
| Data Rate (this speed grade) | [DATA_NEEDED: Mbps speed grade] | — |
| Supply Voltage (VDD) | [DATA_NEEDED: VDD voltage] | — |
| Supply Voltage (VDDQ) | [DATA_NEEDED: VDDQ voltage] | 0.5 V |
| Package Type | [DATA_NEEDED: FBGA ball count / package code] | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | -25C to +85C |
| Montageart | Surface Mount | Surface Mount |
| Standards Compliance | JEDEC LPDDR5X | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | unknown |
| Datenrate | — | 7500 Mbps |
| Supply Voltage (VDD1) | — | 1.8 V |
| Supply Voltage (VDD2) | — | 1.05 V |
| Core Voltage Rail | — | 0.9 V |
| Gehäuse | — | 441-ball FBGA |
| Schnittstelle | — | LPDDR5X (JEDEC low-power DRAM interface) |
| Generation | — | LPDDR5X (1.25x speed, 25% better power efficiency vs LPDDR5) |
| Application Segment | — | AI devices, automotive, mobile |