K3KLALA0DM-MGCU vs K3KL8L80DM-MGCU Vergleich
Detaillierter Direktvergleich von K3KLALA0DM-MGCU von Samsung Electronics und K3KL8L80DM-MGCU von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K3KLALA0DM-MGCU | K3KL8L80DM-MGCU |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $0,00 |
| Speichertyp | LPDDR5X SDRAM | LPDDR5X SDRAM |
| Density | 16 Gbit (2 GB) per die | 8 Gbit |
| Maximum Data Rate | 6400 Mbps per pin | — |
| Schnittstelle | LPDDR5X (LPDDR5X-class channel) | LPDDR5X (JEDEC LPDDR5 backward-compatible) |
| Gehäuse | 315-ball FBGA | FBGA-315 |
| Speicherorganisation | [DATA_NEEDED: die organization x16/x32] | 1G x 32 |
| Supply Voltage - Core (VDD1) | [DATA_NEEDED: VDD1 voltage] | — |
| Supply Voltage - I/O (VDD2/VDDQ) | [DATA_NEEDED: VDDQ voltage] | — |
| Speed Grade Suffix | MGCU (6400 Mbps class) | — |
| Grade | Mobile / Low Power Mobile Grade | — |
| Montageart | Surface Mount | Surface Mount |
| Ball Pitch | [DATA_NEEDED: ball pitch mm] | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Place of Origin | Johor, Malaysia (per distributor listing) | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | unknown |
| DRAM Process | Advanced DRAM node (EUV-class per Samsung LPDDR5X family) | — |
| Supply Voltage (VDD) | — | 1.05 V |
| Datenrate | — | [DATA_NEEDED: max data rate / speed grade] |
| Refresh | — | Self-refresh with per-bank refresh support |
| Power Management | — | Deep Sleep Mode (LPDDR5 feature set) |
| Configuration | — | Single-die, 32-bit bus |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |
| Application Segment | — | Mobile / Automotive / Edge AI |