K3KLALA0DM-MGCU - 16Gb LPDDR5X DRAM 6400Mbps | Samsung
Teilenummer: K3KLALA0DM-MGCU ✓ Aktiv| Menge | Stückpreis | Gesamt |
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| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
K3KLALA0DM-MGCU Übersicht
LPDDR5X is a low-power synchronous DRAM interface standard that extends LPDDR5 with higher data rates and improved signal integrity for battery-powered systems. In the memory hierarchy, it sits as a DRAM device serving as main system memory, positioned below storage (UFS, eMMC, NAND) and above SRAM caches. LPDDR5X devices use a low-voltage signaling interface (VDDQ around 0.5 V class for the 6400 Mbps speed grade) and channel architectures optimized for bandwidth-per-watt in smartphones, tablets, and AI edge accelerators.
Key characteristics of this part include its 16 Gbit density per die, a 6400 Mbps maximum data rate, and the 315-ball FBGA footprint that is the standard LPDDR5/LPDDR5X die-scale package. The MGCU speed-grade suffix in Samsung's naming convention identifies the LPDDR5X 6400 Mbps-class device, and the device is sourced from Samsung's advanced DRAM process with EUV-lithography cell technology, which improves bit density and reduces power per bit transfer.
Technically, LPDDR5X devices such as this one use WCK (word clock) architecture with CA bus training, on-die termination, and link ECC features to sustain multi-gigabit signaling across the mobile-grade channel. The die is designed to attach into package-on-package or PoP-less MCP/uMCP stacks, and Samsung ships these dies both as discrete FBGA components and inside uMCP solutions for handset platforms.
Typical applications include flagship smartphone main memory, tablet and notebook (always-connected PC) DRAM, automotive infotainment memory, and AI edge compute modules where LPDDR5X bandwidth is required within a strict power envelope.
A key design consideration is signal integrity: at 6400 Mbps, PCB trace length matching, WCK routing, and CA bus termination must follow the LPDDR5X JEDEC-class layout guidance, and SoC memory-controller compatibility for LPDDR5X speed grades should be confirmed before BOM placement.
This page adds value beyond the Samsung product listing by synthesizing distributor sourcing channels, same-family drop-in alternatives, and application-level design context not found in any single source.
Drop-in-Alternativen für K3KLALA0DM-MGCU – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit K3KLALA0DM-MGCU (gleiche Bauform und Footprint) – abweichend in Density, Package, Interface, Organization, Data Rate.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
K3KL9L90DM-MGCU
✅ Drop-In✓ Auf Lager
$66.4 / Stück
Datenblatt ansehen →K3KL9L90DM-JGCT
✅ Drop-In✓ Auf Lager
$65.18 / Stück
Datenblatt ansehen →K3KL8L80DM-MGCU
✅ Drop-In✓ Auf Lager
Preis auf Anfrage
Datenblatt ansehen →K3KL8L80DM-JGCT
✅ Drop-In✓ Auf Lager
$80.7 / Stück
Datenblatt ansehen →K3KL7L70EM-MGCU
✅ Drop-In✓ Auf Lager
$12 / Stück
Datenblatt ansehen →K3KLALA0DM-MGCU Grenzwerte & elektrische Eigenschaften
| Speichertyp | LPDDR5X SDRAM |
| Density | 16 Gbit (2 GB) per die |
| Maximum Data Rate | 6400 Mbps per pin |
| Schnittstelle | LPDDR5X (LPDDR5X-class channel) |
| Gehäuse | 315-ball FBGA |
| Speed Grade Suffix | MGCU (6400 Mbps class) |
| Grade | Mobile / Low Power Mobile Grade |
| Montageart | Surface Mount |
| Place of Origin | Johor, Malaysia (per distributor listing) |
| DRAM Process | Advanced DRAM node (EUV-class per Samsung LPDDR5X family) |
K3KLALA0DM-MGCU 315-ball fbga Pinbelegungsleitfaden
Pinbelegung für K3KLALA0DM-MGCU (315-ball fbga-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.
Keine detaillierten Pinbelegungsdaten verfügbar für K3KLALA0DM-MGCU.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
K3KLALA0DM-MGCU ist geeignet für 6 Anwendungs: Flagship Smartphone Main Memory, AI Edge Compute Modules, Always-Connected PCs and Tablets, Automotive Infotainment and Cockpit, XR Headsets and Wearable Compute, 5G CPE and Networking Gateways.
Flagship Smartphone Main Memory
The K3KLALA0DM-MGCU fits flagship smartphone memory subsystems where 16 Gbit per die and 6400 Mbps bandwidth are needed inside a strict power and area budget. Its LPDDR5X interface raises bandwidth-per-watt versus LPDDR5, which directly benefits camera burst capture, on-device NPU inference, and multitasking responsiveness. In a typical uMCP or discrete PoP stack, dies are stacked on the application processor side to shorten the channel and preserve signal integrity at 6400 Mbps. Designers should budget for VDDQ rail integrity and CA bus training support in the SoC controller, and confirm the MGCU speed bin appears on the SoC vendor memory compatibility list before mass production.
Empfohlen
AI Edge Compute Modules
AI edge accelerators and smart-camera SoCs demand sustained memory bandwidth for neural network inference, and the K3KLALA0DM-MGCU addresses this with a 6400 Mbps LPDDR5X channel and 16 Gbit capacity per die. Wide-channel configurations (populating multiple dies per channel) scale aggregate bandwidth to tens of GB/s while keeping DRAM power a fraction of DDR-class alternatives. Because inference workloads are bursty, the LPDDR5X low-power states (deep sleep, self-refresh) materially extend battery life in untethered devices. Implementation requires careful WCK and DQS routing length matching per the LPDDR5X layout class, and on-die termination settings tuned during controller training for stable 6400 Mbps operation.
Empfohlen
Always-Connected PCs and Tablets
Tablets and thin always-connected notebooks use LPDDR5X as soldered-down main memory, and the K3KLALA0DM-MGCU provides a 16 Gbit building block that lets OEMs assemble 8 GB to 16 GB configurations from a small number of dies. Compared with LPDDR4X, the 6400 Mbps rate roughly doubles achievable bandwidth, improving browser, video-editing, and application-switch performance at similar or lower active power. The 315-ball FBGA platform supports high-density stacking to conserve Z-height in fanless chassis. Design teams should verify the platform's LPDDR5X speed-bin support and thermal design power budget, since sustained bandwidth operation raises the memory rail load versus idle-heavy usage profiles.
Empfohlen
Automotive Infotainment and Cockpit
Digital cockpit and infotainment SoCs increasingly specify LPDDR5X for multi-display, navigation, and in-cabin AI workloads, and the K3KLALA0DM-MGCU's 16 Gbit density and 6400 Mbps rate support the frame-buffer and application memory needs of these platforms. Note that this MGCU part is listed as mobile grade; automotive programs should confirm qualification requirements and, if needed, source Samsung's automotive-qualified LPDDR variants with equivalent density and speed. Within a cockpit design, the LPDDR5X channel provides the bandwidth headroom for surround-view camera pipelines and voice assistants running concurrently, with power states enabling low idle draw during parking modes to protect the battery.
Empfohlen
XR Headsets and Wearable Compute
Extended-reality (XR) headsets and smart-glass platforms need both high bandwidth for dual low-latency displays and minimal power for thermal comfort, a combination the K3KLALA0DM-MGCU serves well with 6400 Mbps LPDDR5X signaling and 16 Gbit capacity per die. Rendering at high refresh rates with motion-to-photon latency targets requires sustained memory throughput; LPDDR5X delivers this while the die's low-voltage interface limits heat inside head-worn enclosures. The compact 315-ball FBGA permits tight stacking adjacent to the XR chipset, shortening channels and preserving signal integrity at speed. Designers should emphasize regulator transient response on VDDQ rails during scene-load spikes to avoid training drift.
Empfohlen
5G CPE and Networking Gateways
5G customer-premises equipment and high-throughput home gateways use LPDDR5X-class DRAM for packet buffering, QoS queues, and Wi-Fi 7 coexistence workloads. The K3KLALA0DM-MGCU supplies 16 Gbit per die at 6400 Mbps, giving network SoCs the random-access performance for multi-gigabit line rates without the power cost of DDR4-class solutions. Its mobile-grade low-power behavior also suits battery-backup CPE designs. Layout attention at 6400 Mbps is essential in gateway PCBs: follow LPDDR5X fly-by-free short-branch topology rules, keep the CA/DQ channel away from RF front ends, and validate controller training across temperature, since gateways operate continuously in variable thermal environments.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für K3KLALA0DM-MGCU – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | K3KL9L90DM-MGCU | K3KL8L80DM-MGCU | K3KL7L70EM-MGCU |
|---|---|---|---|---|
| Package | 315-ball FBGA | 315-ball FBGA class - same platform | 315-ball FBGA class - same platform | 315-ball FBGA class - same platform |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Type | LPDDR5X | LPDDR5X family | LPDDR5X family | LPDDR5X family |
| Speed Bin (suffix) | MGCU (6400 Mbps class) | MGCU (6400 Mbps class) | MGCU (6400 Mbps class) | MGCU (EM/MGCU bin) |
| Family / Density Bin | K3KLALA0DM (16 Gbit) | K3KL9L90DM (L9/L9 bin) | K3KL8L80DM (L8/L8 bin) | K3KL7L70EM (L7/L7 bin) |
| Grade | Mobile grade | Mobile grade | Mobile grade | Mobile grade |
| Drop-in Feasibility | Reference part | High - same family, verify ball map | Medium - lower density/speed bin | Medium - lower speed bin |
Wichtigste Unterscheidungsmerkmale
- 6400 Mbps-class LPDDR5X speed bin (vs. K3KL7L70EM-MGCU)
- 16 Gbit density per die (vs. K3KL8L80DM-MGCU)
- LPDDR5X generation with improved bandwidth-per-watt (vs. K4AAG165WM-BCWE (DDR4 SDRAM))
Designhinweise
At 6400 Mbps, LPDDR5X signaling leaves little timing margin. Follow LPDDR5X-class layout rules: match DQ/DQS traces within tight skew windows, keep the CA bus short-branch topology, route WCK as a matched pair, and reference signals to solid ground planes. Impedance discontinuities from vias and connector transitions near the FBGA balls should be minimized. Run controller CA/DQ training at both cold and hot corners; LPDDR5X training parameters can shift with temperature and may require periodic retraining in the field.
LPDDR5X devices use multiple rails (core VDD1 and I/O-class VDD2/VDDQ rails). Provide dedicated, low-ESR decoupling per ball-group and design the PMIC rails for fast transient response, since 6400 Mbps burst traffic produces sharp load steps. Estimated: rail droop budgets of a few percent of VDDQ are typical design targets; confirm exact rail voltages and sequencing requirements from the official Samsung datasheet, which distributors release under RFQ, before finalizing the power tree.
Do not assume all K3KLALA0DM suffixes are interchangeable: the suffix after the dash encodes speed grade and package option, and distributor guidance explicitly warns that different suffixes can have different pin positions and specifications. Always match the exact suffix (MGCU) and verify the SoC memory controller lists the MGCU speed bin. For sourcing, beware of date-code and grade discrepancies in the open market for this high-demand LPDDR5X part; validate date codes and require traceability on broker purchases.
Compliance-Informationen
Compliance data not published on the searched distributor pages. Mobile-grade part (not positioned as AEC-Q100 automotive). Obtain RoHS/REACH declarations from Samsung via RFQ.