K3LK4K40CM-BGCP vs K3LKCKC0BM-MGCP Vergleich
Detaillierter Direktvergleich von K3LK4K40CM-BGCP von Samsung Electronics und K3LKCKC0BM-MGCP von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K3LK4K40CM-BGCP | K3LKCKC0BM-MGCP |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | DRAM | DRAM |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $37,80 | $65,63 |
| Speichertyp | LPDDR5 SDRAM | LPDDR5 SDRAM |
| Density | 96 Gb (12 GB) | 64 Gbit (8 GB) |
| Speicherorganisation | 1536M x 64 | 2G x32 |
| Datenrate | 6400 Mbps per pin | 6400 Mbps |
| Supply Voltage (VDD) | 1.05 V | — |
| Gehäuse | 496-ball FBGA | FBGA-315 (PBGA) |
| Montageart | Surface Mount | Surface Mount |
| Schnittstelle | LPDDR5 (JEDEC) | CMOS, LPDDR5 |
| Betriebstemperatur | [DATA_NEEDED: Operating Temperature] | -25C to +85C |
| Access Time / CAS Latency | [DATA_NEEDED: CAS Latency] | — |
| Refresh Scheme | Per-bank / all-bank refresh | — |
| Power-Down Modes | Deep sleep / power-down supported | — |
| Application Segment | Mobile, embedded, computing modules | — |
| RoHS-Status | [DATA_NEEDED: RoHS Status] | Compliant |
| Packaging | [DATA_NEEDED: standard packing quantity] | — |
| Supply Voltage (VDD1) | — | 1.05 V |
| Supply Voltage (VDD2/other rails) | — | 1.8 V, 900 mV, 500 mV |
| Technology | — | CMOS DRAM |
| Product Family | — | Samsung LPDDR5 |
| Bandwidth (per Samsung LPDDR5 family) | — | 51.2 GB/s (family-level, 6400 Mbps pin speed) |
| Power Saving (family feature) | — | Up to 20% power saving vs previous generation (Samsung LPDDR5 family) |
| Unit Price | — | USD 57.7195 (LCSC, as of 2026-09-04) |