K3LKBKB0BM-MGCP vs K3LK8K80CM-MFCP Vergleich
Detaillierter Direktvergleich von K3LKBKB0BM-MGCP von Samsung Electronics und K3LK8K80CM-MFCP von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K3LKBKB0BM-MGCP | K3LK8K80CM-MFCP |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $46,62 | $0,00 |
| Speichertyp | DRAM (LPDDR5 SDRAM) | LPDDR5 SDRAM |
| Speichergröße | 32 Gbit | — |
| Speicherorganisation | 1G x 32 | [DATA_NEEDED: organization (x width)] |
| Datenrate | 6400 Mbps per pin | — |
| Supply Voltage Rails | 500 mV, 900 mV, 1.05 V, 1.8 V | — |
| Schnittstelle | LPDDR5 x32 | LPDDR5 (JESD209-5 class low-power DRAM interface) |
| Gehäuse | FBGA-315 | 315-ball FBGA (MFCP) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -25C to +85C | -40 C to +105 C (automotive-grade) |
| Technology Generation | LPDDR5 (JEDEC LPDDR5 family) | — |
| RoHS-Status | Compliant | unknown |
| Density per Package | 4 GB (32 Gbit) | — |
| Refresh | Self-refresh and auto-refresh (LPDDR5 standard) | — |
| Application Segment | Mobile, embedded, industrial computing | — |
| Standby / Deep Sleep | LPDDR5 deep-sleep power states | — |
| MSL-Level | [DATA_NEEDED: MSL level] | — |
| Access Time / Latency | [DATA_NEEDED: CAS latency] | — |
| Density | — | 48 Gbit (6 GB) |
| Pin Speed | — | 6400 Mbps |
| Data Rate (package) | — | 51.2 GB/s (family max) |
| Ball Count | — | 315 |
| Versorgungsspannung | — | [DATA_NEEDED: VDD/VDDQ voltage] |
| Power Saving vs LPDDR4X | — | Approximately 20% |
| Generation | — | LPDDR5 (5th generation low-power DRAM) |
| Application Grade | — | Automotive-grade storage chip |
| Place of Origin | — | Johor, Malaysia |