K3LKBKB0BM-MGCP vs K3LKCKC0BM-MGCP Vergleich
Detaillierter Direktvergleich von K3LKBKB0BM-MGCP von Samsung Electronics und K3LKCKC0BM-MGCP von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K3LKBKB0BM-MGCP | K3LKCKC0BM-MGCP |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | DRAM |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $46,62 | $65,63 |
| Speichertyp | DRAM (LPDDR5 SDRAM) | LPDDR5 SDRAM |
| Speichergröße | 32 Gbit | — |
| Speicherorganisation | 1G x 32 | 2G x32 |
| Datenrate | 6400 Mbps per pin | 6400 Mbps |
| Supply Voltage Rails | 500 mV, 900 mV, 1.05 V, 1.8 V | — |
| Schnittstelle | LPDDR5 x32 | CMOS, LPDDR5 |
| Gehäuse | FBGA-315 | FBGA-315 (PBGA) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -25C to +85C | -25C to +85C |
| Technology Generation | LPDDR5 (JEDEC LPDDR5 family) | — |
| RoHS-Status | Compliant | Compliant |
| Density per Package | 4 GB (32 Gbit) | — |
| Refresh | Self-refresh and auto-refresh (LPDDR5 standard) | — |
| Application Segment | Mobile, embedded, industrial computing | — |
| Standby / Deep Sleep | LPDDR5 deep-sleep power states | — |
| MSL-Level | [DATA_NEEDED: MSL level] | — |
| Access Time / Latency | [DATA_NEEDED: CAS latency] | — |
| Density | — | 64 Gbit (8 GB) |
| Supply Voltage (VDD1) | — | 1.05 V |
| Supply Voltage (VDD2/other rails) | — | 1.8 V, 900 mV, 500 mV |
| Technology | — | CMOS DRAM |
| Product Family | — | Samsung LPDDR5 |
| Bandwidth (per Samsung LPDDR5 family) | — | 51.2 GB/s (family-level, 6400 Mbps pin speed) |
| Power Saving (family feature) | — | Up to 20% power saving vs previous generation (Samsung LPDDR5 family) |
| Unit Price | — | USD 57.7195 (LCSC, as of 2026-09-04) |