K3LKCKC0BM-MGCP vs K3KL8L80QM-MUCT Vergleich
Detaillierter Direktvergleich von K3LKCKC0BM-MGCP von Samsung Electronics und K3KL8L80QM-MUCT von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K3LKCKC0BM-MGCP | K3KL8L80QM-MUCT |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | DRAM | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $65,63 | $13,40 |
| Speichertyp | LPDDR5 SDRAM | LPDDR5X SDRAM |
| Density | 64 Gbit (8 GB) | 32 Gb (4 GB) |
| Speicherorganisation | 2G x32 | [DATA_NEEDED: organization (xN bit width)] |
| Datenrate | 6400 Mbps | [DATA_NEEDED: data rate per pin (Gbps)] |
| Schnittstelle | CMOS, LPDDR5 | LPDDR5X channel interface |
| Supply Voltage (VDD1) | 1.05 V | — |
| Supply Voltage (VDD2/other rails) | 1.8 V, 900 mV, 500 mV | — |
| Betriebstemperatur | -25C to +85C | [DATA_NEEDED: operating temperature range] |
| Gehäuse | FBGA-315 (PBGA) | FBGA (original package, 315-ball class) |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | [DATA_NEEDED: RoHS status] |
| Technology | CMOS DRAM | — |
| Product Family | Samsung LPDDR5 | — |
| Bandwidth (per Samsung LPDDR5 family) | 51.2 GB/s (family-level, 6400 Mbps pin speed) | — |
| Power Saving (family feature) | Up to 20% power saving vs previous generation (Samsung LPDDR5 family) | — |
| Unit Price | USD 57.7195 (LCSC, as of 2026-09-04) | — |
| Supply Voltage Class | — | [DATA_NEEDED: VDD/VDDQ voltage] |
| Speed Grade | — | QM (per Samsung part numbering) |
| Series | — | LPDDR5X |
| Marke | — | Samsung Semiconductor |
| Packaging Suffix | — | MUCT |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |
| Application Segment | — | Mobile / AI edge computing |