K3LKCKC0BM-MGCP vs K3KL8L80QM-MUCT Comparaison
Comparaison détaillée côte à côte de K3LKCKC0BM-MGCP par Samsung Electronics et K3KL8L80QM-MUCT par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | K3LKCKC0BM-MGCP | K3KL8L80QM-MUCT |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | DRAM | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $65,63 | $13,40 |
| Type de mémoire | LPDDR5 SDRAM | LPDDR5X SDRAM |
| Density | 64 Gbit (8 GB) | 32 Gb (4 GB) |
| Organisation de la mémoire | 2G x32 | [DATA_NEEDED: organization (xN bit width)] |
| Débit de données | 6400 Mbps | [DATA_NEEDED: data rate per pin (Gbps)] |
| Interface | CMOS, LPDDR5 | LPDDR5X channel interface |
| Supply Voltage (VDD1) | 1.05 V | — |
| Supply Voltage (VDD2/other rails) | 1.8 V, 900 mV, 500 mV | — |
| Température de fonctionnement | -25C to +85C | [DATA_NEEDED: operating temperature range] |
| Boîtier | FBGA-315 (PBGA) | FBGA (original package, 315-ball class) |
| Type de montage | Surface Mount | Surface Mount |
| Statut RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Technology | CMOS DRAM | — |
| Product Family | Samsung LPDDR5 | — |
| Bandwidth (per Samsung LPDDR5 family) | 51.2 GB/s (family-level, 6400 Mbps pin speed) | — |
| Power Saving (family feature) | Up to 20% power saving vs previous generation (Samsung LPDDR5 family) | — |
| Unit Price | USD 57.7195 (LCSC, as of 2026-09-04) | — |
| Supply Voltage Class | — | [DATA_NEEDED: VDD/VDDQ voltage] |
| Speed Grade | — | QM (per Samsung part numbering) |
| Series | — | LPDDR5X |
| Marque | — | Samsung Semiconductor |
| Packaging Suffix | — | MUCT |
| Niveau MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Application Segment | — | Mobile / AI edge computing |