K4A4G085WD vs K4A4G085WD-BCPB Vergleich
Detaillierter Direktvergleich von K4A4G085WD von Samsung Electronics und K4A4G085WD-BCPB von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4A4G085WD | K4A4G085WD-BCPB |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,05 | $0,00 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Die Generation | D-die | D-die |
| Density | 4 Gb | 4 Gb |
| Speicherorganisation | 512M x 8 | 512M x 8 |
| Datenrate | Up to 2400 Mbps (speed-grade dependent) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Gehäuse | 78-ball FBGA | FBGA-78 (PB) |
| Montageart | Surface Mount | Surface Mount (BGA) |
| Speed Grade (example) | -BCPB (DDR4-2400), -BCRC | — |
| Schnittstellentyp | DDR4 (double data rate, source-synchronous) | — |
| Bank Group Architecture | Yes (DDR4 bank groups) | — |
| ODT | On-Die Termination (built-in) | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| CAS Latency (typical) | [DATA_NEEDED: CL per speed grade] | — |
| Refresh | [DATA_NEEDED: refresh interval] | [DATA_NEEDED: refresh specification] |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant (PB lead-free suffix) |
| Lead-Free | [DATA_NEEDED: lead-free status] | — |
| Versorgungsspannung | — | 1.2 V |
| Schnittstelle | — | DDR4 (Double Data Rate 4) |
| Speed Grade / Data Rate | — | [DATA_NEEDED: speed grade / data rate] |
| CAS-Latenz | — | [DATA_NEEDED: CAS latency] |
| Halogenfrei | — | [DATA_NEEDED: halogen-free status] |
| Datasheet Pages | — | 66 pages (K4A4G085WD family datasheet) |