K4A4G165WF-BCTD vs H5ANAG6NBJR-UHC Vergleich
Detaillierter Direktvergleich von K4A4G165WF-BCTD von Samsung Electronics und H5ANAG6NBJR-UHC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4A4G165WF-BCTD | H5ANAG6NBJR-UHC |
|---|---|---|
| Marke | Samsung Electronics | SK hynix |
| Kategorie | Memory ICs | DRAM |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $8,20 | $8,09 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Speichergröße | 4 Gbit | — |
| Speicherorganisation | 256M x 16 | 256M x 16 |
| Speed (Data Rate) | 2666 Mbps (DDR4-2666) | — |
| Supply Voltage VDD | 1.2 V (1.14 V to 1.26 V) | — |
| I/O Voltage VDDQ | 1.2 V | — |
| Schnittstelle | SSTL-12 | DDR4 (CMOS) |
| Gehäuse | FBGA-96 (PBGA96) | PBGA96 / FBGA-96 (TFBGA) |
| Montageart | Surface Mount | — |
| Betriebstemperatur | 0C to +95C | -40C to +95C |
| Eigenschaften | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Technology | Samsung F-die CMOS | — |
| Bank Groups | 4 (x16 configuration) | — |
| Refresh | Self-refresh and auto-refresh supported | Auto / Self Refresh |
| RoHS-Status | Compliant | RoHS Compliant |
| Density | — | 4 Gb |
| Package Dimensions | — | 13 mm length (per JESD-30 R-PBGA-B96) |
| Access Mode | — | Multi Bank, Page Burst |
| Data Mask | — | Supported (DM function) |
| Asynchronous Reset | — | Supported |
| On-Chip Termination | — | Dynamic ODT |
| ZQ Calibration | — | Supported |
| Write Leveling | — | Supported |
| CRC | — | Supported |
| Supply Voltage Class | — | DDR4 (1.2 V class) |
| REACH Compliance | — | Compliant |
| ECCN | — | EAR99 |
| HTS Code | — | 8542.32.00.36 |
| CAS-Latenz | — | [DATA_NEEDED: CAS Latency] |
| Max Data Rate | — | [DATA_NEEDED: Max Data Rate] |