K4B4G1646D-BCK00 vs H5TC4G63AFR-PBJ Vergleich
Detaillierter Direktvergleich von K4B4G1646D-BCK00 von Samsung Electronics und H5TC4G63AFR-PBJ von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K4B4G1646D-BCK00 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BCK00 ✓ AktivSpezifikationsvergleich
| Parameter | K4B4G1646D-BCK00 | H5TC4G63AFR-PBJ |
|---|---|---|
| Marke | Samsung Electronics | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $5,90 | $7,50 |
| Density | 4 Gb | — |
| Speicherorganisation | 256M x 16 | — |
| Speichertyp | DDR3L SDRAM | DDR3L SDRAM |
| Speed Grade | DDR3-1600 (800 MHz) | — |
| Datenrate | 1600 Mbps/pin | [DATA_NEEDED: Data rate (e.g., 1600 Mbps)] |
| Versorgungsspannung | 1.35V (1.283V to 1.45V) | 1.35 V |
| I/O Voltage | 1.35V | — |
| Gehäuse | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | 96-ball TFBGA |
| Betriebstemperatur | 0°C to 95°C (Tcase) | — |
| Number of Banks | 8 | — |
| CAS-Latenz | 11 (at 1600 Mbps) | [DATA_NEEDED: CAS Latency] |
| Burst Length | 8, 4 (with burst chop) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Halogenfrei | Yes | — |
| Speichergröße | — | 4 Gb (256M x 16) |
| Temperature Grade | — | Industrial (-40°C to +95°C) |
| Refresh Cycles | — | 8192 |
| Package Shape | — | Rectangular |
| Number of Terminals | — | 96 |
| Access Time | — | 0.225 ns (from H5TC4G63AFR-PBR datasheet) |
| Auto Self-Refresh | — | Yes |
| Data Mask | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| RoHS-Status | — | [DATA_NEEDED: RoHS Status] |