K4B4G1646D-BCK00 vs H5TC4G63AFR-PBJ 对比
详细并排对比 K4B4G1646D-BCK00 出自 Samsung Electronics 和 H5TC4G63AFR-PBJ 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4B4G1646D-BCK00 | H5TC4G63AFR-PBJ |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $5.90 | $7.50 |
| Density | 4 Gb | — |
| 存储组织 | 256M x 16 | — |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| Speed Grade | DDR3-1600 (800 MHz) | — |
| 数据速率 | 1600 Mbps/pin | [DATA_NEEDED: Data rate (e.g., 1600 Mbps)] |
| 电源电压 | 1.35V (1.283V to 1.45V) | 1.35 V |
| I/O Voltage | 1.35V | — |
| 封装 | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | 96-ball TFBGA |
| 工作温度 | 0°C to 95°C (Tcase) | — |
| Number of Banks | 8 | — |
| CAS 延迟 | 11 (at 1600 Mbps) | [DATA_NEEDED: CAS Latency] |
| Burst Length | 8, 4 (with burst chop) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| 无卤 | Yes | — |
| 存储容量 | — | 4 Gb (256M x 16) |
| Temperature Grade | — | Industrial (-40°C to +95°C) |
| Refresh Cycles | — | 8192 |
| Package Shape | — | Rectangular |
| Number of Terminals | — | 96 |
| Access Time | — | 0.225 ns (from H5TC4G63AFR-PBR datasheet) |
| Auto Self-Refresh | — | Yes |
| Data Mask | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| RoHS 状态 | — | [DATA_NEEDED: RoHS Status] |