K4RAH086VB-BCQK vs K4RAH086VB-BIWM Vergleich
Detaillierter Direktvergleich von K4RAH086VB-BCQK von Samsung Electronics und K4RAH086VB-BIWM von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4RAH086VB-BCQK | K4RAH086VB-BIWM |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $41,02 | $4,85 |
| Speichertyp | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gb |
| Speicherorganisation | 2G x 8 | [DATA_NEEDED: organization x4/x8] |
| Datenrate | 4800 Mbps (DDR5-4800) | 5600 Mbps per pin |
| Clock Frequency | 2400 MHz | — |
| Supply Voltage (VDD) | 1.1 V | — |
| Schnittstelle | Parallel | — |
| Gehäuse | FBGA-82 | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | 0C to 95C (commercial) | [DATA_NEEDED: temperature range] |
| ECC | On-die ECC | — |
| Burst Length | BL32 (DDR5 standard) | — |
| Memory Format | DRAM (volatile) | — |
| DLL Mode | DLL Enabled (datasheet timing basis) | — |
| Product Status | Active | — |
| Packaging | Tray | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Versorgungsspannung | — | [DATA_NEEDED: VDD voltage] |
| Package Type | — | [DATA_NEEDED: package (FBGA, ball count)] |
| Bank Groups | — | [DATA_NEEDED: bank group count] |
| CAS Latency (CWL) | — | Programmable (per Samsung DDR5 16Gb B-die spec) |
| DLL | — | DLL Enabled mode operation |
| On-Die Termination | — | Yes (via Mode Register setting) |
| Internal Calibration | — | Yes (via MPC) |
| Asynchronous Reset | — | Yes |
| Posted CAS | — | Yes |
| Maximum Data Rate (family, per spec Rev1.0) | — | 4800 Mbps per pin (DDR5-4800, general applications) |