K4RAH086VB-BIQK vs K4RBH086VB-BCQK Vergleich
Detaillierter Direktvergleich von K4RAH086VB-BIQK von Samsung Electronics und K4RBH086VB-BCQK von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4RAH086VB-BIQK | K4RBH086VB-BCQK |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $4,25 | $0,00 |
| Speichertyp | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gb |
| Speicherorganisation | 2G x 8 | 2G x 8 |
| Datenrate | 4800 Mbps/pin | 4800 Mbps |
| Core Supply Voltage | 1.1 V (nominal) | — |
| Gehäuse | 82FBGA | FBGA-82 |
| Configuration | X8 | — |
| Speed Grade | BIQK (-BIQK bin) | — |
| ECC | On-die ECC (DDR5 standard) | — |
| Schnittstelle | DDR5 (CA reduced pin count) | DDR5 (CA bus, ODECC) |
| Burst Length | 16 / 32 | — |
| Operating Mode | DLL enabled | — |
| RoHS-Status | Compliant (Lead-Free & Halogen-Free per Samsung 82FBGA) | Compliant |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| CAS-Latenz | [DATA_NEEDED: CAS latency (CL)] | — |
| Refresh | [DATA_NEEDED: refresh rate specification] | [DATA_NEEDED: refresh rate 32ms/64ms] |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| Supply Voltage (VDD) | — | 1.1 V |
| On-die ECC | — | Yes |
| Montageart | — | Surface Mount |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS latency at 4800 Mbps] |
| Power Supply Rails | — | VDD/VDDQ 1.1 V (PMIC on module) |
| Packaging | — | [DATA_NEEDED: tray or tape and reel standard quantity] |