K4RAH165VB-BCWM vs K4RAH165VB-BIWM Vergleich
Detaillierter Direktvergleich von K4RAH165VB-BCWM von Samsung Electronics und K4RAH165VB-BIWM von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K4RAH165VB-BIWM - 16Gb DDR5 1Gx16 5600Mbps DRAM | Samsung
K4RAH165VB-BIWM ✓ AktivSpezifikationsvergleich
| Parameter | K4RAH165VB-BCWM | K4RAH165VB-BIWM |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $9,92 | $0,00 |
| Speichertyp | DDR5 SDRAM (volatile DRAM) | DDR5 SDRAM |
| Speichergröße | 16 Gb | — |
| Memory Organization | 1G x 16 | — |
| Memory Interface | Parallel | — |
| Versorgungsspannung | 1.1 V | 1.1 V |
| Technology | DDR5 | — |
| Gehäuse | FBGA-106 | 106-ball FBGA |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | 0C to +85C | 0C to +85C |
| Maximum Data Rate (DDR5 family) | up to 7200 Mbps | — |
| On-die ECC | Yes | — |
| Auto Self-Refresh | Yes | — |
| Asynchronous Reset | Yes | — |
| Write Leveling | Yes | Yes |
| CRC Function | Yes | Yes |
| ZQ Calibration | Yes | Yes |
| RoHS-Status | Compliant | Compliant (per JLCPCB listing for K4RAH165VB-BCWM, same family) |
| Speed Grade (suffix BCWM) | [DATA_NEEDED: speed grade / CAS latency] | — |
| Packaging | Tray | — |
| Density | — | 16 Gb |
| Speicherorganisation | — | 1G x 16 |
| Datenrate | — | 5600 Mbps |
| On-Die ECC | — | Yes (per K4RAH165VB family datasheet) |
| Self Refresh | — | Auto self-refresh |
| Reset Function | — | Asynchronous reset |
| DLL | — | DLL enabled mode of operation (per datasheet) |
| Standard Packaging | — | 1000 units |