K4RAH165VB-BCWM vs K4RBH165VB-BCQK Vergleich
Detaillierter Direktvergleich von K4RAH165VB-BCWM von Samsung Electronics und K4RBH165VB-BCQK von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4RAH165VB-BCWM | K4RBH165VB-BCQK |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $9,92 | $0,00 |
| Speichertyp | DDR5 SDRAM (volatile DRAM) | DDR5 SDRAM |
| Speichergröße | 16 Gb | 16 Gb |
| Memory Organization | 1G x 16 | — |
| Memory Interface | Parallel | — |
| Versorgungsspannung | 1.1 V | [DATA_NEEDED: core supply voltage (VDD), nominally 1.1 V for DDR5] |
| Technology | DDR5 | — |
| Gehäuse | FBGA-106 | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | 0C to +85C | 0 C to +85 C |
| Maximum Data Rate (DDR5 family) | up to 7200 Mbps | — |
| On-die ECC | Yes | — |
| Auto Self-Refresh | Yes | — |
| Asynchronous Reset | Yes | — |
| Write Leveling | Yes | Yes |
| CRC Function | Yes | Yes |
| ZQ Calibration | Yes | Yes |
| RoHS-Status | Compliant | [DATA_NEEDED: RoHS status] |
| Speed Grade (suffix BCWM) | [DATA_NEEDED: speed grade / CAS latency] | — |
| Packaging | Tray | — |
| Speicherorganisation | — | 1G x 16 |
| Datenrate | — | 4800 Mbps/pin |
| Speed Grade | — | BCQK (4800 Mbps) |
| Self Refresh | — | Auto self-refresh |
| Reset Function | — | Asynchronous reset |
| Error Correction | — | On-chip (on-die) ECC |
| Package Type | — | [DATA_NEEDED: exact package code, expected FBGA surface mount] |
| Burst Length | — | [DATA_NEEDED: burst length (BL16 per DDR5 standard)] |