K4RBH165VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung
Teilenummer: K4RBH165VB-BCQK ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
K4RBH165VB-BCQK Übersicht
DDR5 SDRAM is the fifth generation of Double Data Rate synchronous dynamic random-access memory, the dominant volatile memory technology at the top of the memory hierarchy in servers, workstations, and high-performance client systems. Compared with DDR4, DDR5 doubles the internal bank count to 32, moves power management onto the DIMM or module via a PMIC, lowers the operating voltage to approximately 1.1 V, and doubles burst length to BL16, improving bandwidth and channel efficiency per DRAM.
Key features reported for this device family include an operating temperature range of 0 C to +85 C, auto self-refresh, an asynchronous reset function, on-chip error correction code (On-die ECC), write leveling, CRC and CA parity functions, and ZQ calibration, according to the LCSC product listing for the K4RAH165VB-BCQK variant. These features sustain data integrity and signal integrity at 4800 Mbps/pin data rates in dense memory subsystems.
Architecturally, the device uses a x16 I/O organization with 1G addressable locations, DDR5 bank-group architecture, and on-die ECC that corrects internal bit errors before data reaches the I/O, improving effective reliability without external ECC overhead. The BCQK speed grade denotes the 4800 Mbps bin within the Samsung DDR5 family.
Typical applications include DDR5 server RDIMM and client SO-DIMM modules, desktop and workstation UDIMMs, embedded memory subsystems for networking equipment, and high-bandwidth computing platforms where 16 Gb density per component reduces component count on the module.
Design consideration: DDR5 requires the companion PMIC (such as the on-DIMM power management device) and careful DQ/CA trace length matching per JEDEC DDR5 routing guidelines; termination settings differ from DDR4 and must not be directly ported.
This page synthesizes verified distributor data, drop-in family alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in-Alternativen für K4RBH165VB-BCQK – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit K4RBH165VB-BCQK (gleiche Bauform und Footprint) – abweichend in Operating Temperature, Package, Interface, Data Rate, Density.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
K4RAH165VB-BCQK
✅ Drop-In✓ Auf Lager
Preis auf Anfrage
Datenblatt ansehen →K4RAH165VB-BCWM
✅ Drop-In✓ Auf Lager
$9.92 / Stück
Datenblatt ansehen →K4RAH165VP-BCWM
✅ Drop-In✓ Auf Lager
$24.6094 / Stück
Datenblatt ansehen →K4RBH086VB-BCQK
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
Preis auf Anfrage
Datenblatt ansehen →K4RBH086VB-BCWM
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
Preis auf Anfrage
Datenblatt ansehen →K4RHE165VB-BCWM
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
Preis auf Anfrage
Datenblatt ansehen →K4RAH086VB-BCQK
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$41.0156 / Stück
Datenblatt ansehen →K4RBH165VB-BCQK Grenzwerte & elektrische Eigenschaften
| Speichertyp | DDR5 SDRAM |
| Speichergröße | 16 Gb |
| Speicherorganisation | 1G x 16 |
| Datenrate | 4800 Mbps/pin |
| Speed Grade | BCQK (4800 Mbps) |
| Betriebstemperatur | 0 C to +85 C |
| Self Refresh | Auto self-refresh |
| Reset Function | Asynchronous reset |
| Error Correction | On-chip (on-die) ECC |
| Write Leveling | Yes |
| CRC Function | Yes |
| ZQ Calibration | Yes |
| Montageart | Surface Mount |
K4RBH165VB-BCQK standard Pinbelegungsleitfaden
Pinbelegung für K4RBH165VB-BCQK (standard-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.
Keine detaillierten Pinbelegungsdaten verfügbar für K4RBH165VB-BCQK.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
K4RBH165VB-BCQK ist geeignet für 6 Anwendungs: Server RDIMM Modules, Client Desktop and Workstation UDIMMs, Networking and Communication Equipment, High-Performance Computing Accelerator Cards, Test and Measurement Instrumentation, Embedded and Industrial Computing Platforms.
Server RDIMM Modules
The K4RBH165VB-BCQK fits server Registered DIMM (RDIMM) designs where 16 Gb DDR5 components at 4800 Mbps/pin deliver mainstream data-center bandwidth. Its x16 organization maximizes capacity per package, reducing component count on the module and improving yield, while on-die ECC and CRC functions sustain data integrity across dense ranks. Placed in x16-based rank topologies with the module PMIC regulating the low-voltage core supply, the device supports the DDR5-4800 rates standard for current Intel and AMD server platforms. The 0 C to +85 C operating range covers data-center ambient conditions, and ZQ calibration maintains output impedance accuracy across temperature for reliable multi-rank signaling.
Empfohlen
Client Desktop and Workstation UDIMMs
In desktop and workstation unbuffered DIMMs, the K4RBH165VB-BCQK provides 16 Gb per component at DDR5-4800, enabling high-capacity modules with fewer devices per rank. The 1G x 16 organization suits two-rank consumer module layouts, and asynchronous reset plus auto self-refresh simplify power-state transitions in client platforms that spend substantial time in low-power states. On-die ECC raises effective reliability for workstations running long simulations without needing module-level ECC logic. Designers should follow JEDEC DDR5 routing rules for DQ/CA length matching and use the device's write leveling to close timing across the module's fly-by command bus at 4800 Mbps.
Empfohlen
Networking and Communication Equipment
Switches, routers, and 5G infrastructure line cards use 16 Gb DDR5 components like the K4RBH165VB-BCQK for packet buffering, queue management, and control-plane storage. The 4800 Mbps/pin rate supplies the bandwidth needed to keep pace with multi-hundred-gigabit forwarding pipelines, while CRC and on-die ECC protect buffered data in always-on network equipment. The x16 organization reduces the number of memory devices per card, easing layout congestion around the forwarding ASIC. Asynchronous reset supports rapid re-initialization after line-card faults, and the 0 C to +85 C range fits well-ventilated telecom shelves.
Empfohlen
High-Performance Computing Accelerator Cards
GPU and AI accelerator companion memory subsystems use DDR5 components such as the K4RBH165VB-BCQK for weight storage, activation buffers, and host-transfer staging. The 16 Gb density allows multi-gigabyte local memory per card with a compact BGA population, and the 4800 Mbps data rate sustains the sustained read/write throughput that AI inference and training workloads demand. On-die ECC is particularly valuable in long-running training jobs where uncorrected memory errors would corrupt model state. Designers must budget the approximately 1.1 V core rail with the on-DIMM/on-card PMIC and verify thermal performance under sustained full-bandwidth traffic within the 0 C to +85 C window.
Empfohlen
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and protocol analyzers require deep, high-bandwidth capture memory, making 16 Gb DDR5 parts like the K4RBH165VB-BCQK a cost-effective fit. The 4800 Mbps/pin rate supports streaming high-sample-rate data into capture buffers, while the 1G x 16 organization allows building multi-gigabyte record lengths from a modest component count. Auto self-refresh enables retaining capture data through instrument standby states, and ZQ calibration keeps I/O impedance accurate across the instrument's warm-up and ambient drift. The commercial 0 C to +85 C range suits benchtop instruments; extended-range variants should be selected for field-deployed testers.
Empfohlen
Embedded and Industrial Computing Platforms
Industrial PCs, edge servers, and embedded controllers use soldered-down or SODIMM-based DDR5 such as the K4RBH165VB-BCQK for main memory. The 16 Gb component provides the density edge platforms need for AI-at-the-edge inference and video analytics while keeping the BOM compact. On-die ECC improves reliability in unattended 24/7 operation, and auto self-refresh supports rapid-resume low-power modes in battery-backed edge nodes. Designers should validate signal integrity at 4800 Mbps on their carrier PCB using Samsung's DDR5 design guide, and note that the commercial 0 C to +85 C rating requires derating in high-temperature sealed enclosures.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für K4RBH165VB-BCQK – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | K4RAH165VB-BCQK | K4RAH165VB-BCWM | K4RBH086VB-BCQK | K4RHE165VB-BCWM |
|---|---|---|---|---|---|
| Package | BGA (DDR5 16Gb x16 package family) | BGA (same DDR5 x16 package family) | BGA (same DDR5 x16 package family) | BGA (same DDR5 x16 package family) | BGA (same DDR5 x16 package family) |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 16 Gb | 16 Gb | 16 Gb | 8 Gb | 16 Gb |
| Organization | 1G x 16 | 1G x 16 | 1G x 16 | 512M x 16 | 1G x 16 |
| On-die ECC | Yes | Yes | Yes (DDR5 standard feature) | Yes (DDR5 standard feature) | Yes (DDR5 standard feature) |
| Lifecycle Status | Active | Active (5140 pcs stock, Aug 31 2026) | Active | Active | Active |
Wichtigste Unterscheidungsmerkmale
- 16 Gb density doubles per-component capacity vs 8 Gb siblings (vs. K4RBH086VB-BCQK)
- 4800 Mbps BCQK speed grade over WM-bin parts (vs. K4RAH165VB-BCWM)
- On-die ECC reduces system-level error exposure (vs. Legacy DDR4 parts such as K4A8G165WB-BCWE)
Designhinweise
DDR5 moves power management off the memory controller and onto the module or board via a dedicated PMIC. Estimated: at DDR5-4800 with a 1.1 V-class core rail, idle-to-active current swing on a rank of 16 Gb x16 devices can exceed several amps per rail; size the PMIC and its output capacitance per the JEDEC DDR5 PMIC specification and Samsung's recommended decoupling, and verify power-integrity (PDN impedance) across the device's operating frequency range before tape-out.
At 4800 Mbps/pin, DDR5 relies on DFE (decision feedback equalization) receivers, write leveling, CA parity, and CRC to close timing and data integrity. Match DQ/DQS and CA trace lengths per Samsung's DDR5 design guide, do not port DDR4 termination rules, and enable ZQ calibration with the recommended external precision resistor. Simulate the full channel (controller, package, PCB, DRAM) with DDR5 IBIS-AMI models obtained from Samsung.
Do not assume drop-in compatibility between Samsung die revisions (RAH vs RBH) without checking the ordering-code table in the official datasheet; the RAH/B prefix encodes die/process revision and parameters can shift between revisions. Also confirm the speed grade suffix (QK vs WM) matches your controller's supported rate, and note the 0 C to +85 C commercial temperature range - it excludes automotive and extended-industrial deployments.
Compliance-Informationen
Compliance status not stated in retrieved data; request Samsung environmental compliance certificates via RFQ.
