K4RAH165VB-BCWM vs K4RBH165VB-BCWM Vergleich
Detaillierter Direktvergleich von K4RAH165VB-BCWM von Samsung Electronics und K4RBH165VB-BCWM von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4RAH165VB-BCWM | K4RBH165VB-BCWM |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $9,92 | $9,85 |
| Speichertyp | DDR5 SDRAM (volatile DRAM) | DDR5 SDRAM |
| Speichergröße | 16 Gb | — |
| Memory Organization | 1G x 16 | — |
| Memory Interface | Parallel | — |
| Versorgungsspannung | 1.1 V | — |
| Technology | DDR5 | — |
| Gehäuse | FBGA-106 | FBGA-106 |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | 0C to +85C | 0C to +85C |
| Maximum Data Rate (DDR5 family) | up to 7200 Mbps | — |
| On-die ECC | Yes | — |
| Auto Self-Refresh | Yes | Yes |
| Asynchronous Reset | Yes | Yes |
| Write Leveling | Yes | Yes |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| RoHS-Status | Compliant | Compliant |
| Speed Grade (suffix BCWM) | [DATA_NEEDED: speed grade / CAS latency] | — |
| Packaging | Tray | — |
| Density | — | 16 Gbit |
| Speicherorganisation | — | 1G x 16 |
| Supply Voltage (VDD) | — | 1.1 V |
| Data Rate Class | — | DDR5 5600 Mbps (family per Octopart listing of sibling part) |
| On-Die ECC | — | Yes |
| Write CRC | — | Yes |
| Operating Mode | — | DLL Enabled |
| Lead Free | — | Yes |
| MSL-Level | — | [DATA_NEEDED: MSL Level] |
| Refresh Rate | — | [DATA_NEEDED: Refresh Rate] |