K4RBH165VB-BCWM vs K4RBH086VB-BCWM Vergleich
Detaillierter Direktvergleich von K4RBH165VB-BCWM von Samsung Electronics und K4RBH086VB-BCWM von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4RBH165VB-BCWM | K4RBH086VB-BCWM |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $9,85 | $0,00 |
| Speichertyp | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gbit | 16 Gb |
| Speicherorganisation | 1G x 16 | 2G x 8 |
| Supply Voltage (VDD) | 1.1 V | — |
| Data Rate Class | DDR5 5600 Mbps (family per Octopart listing of sibling part) | — |
| Gehäuse | FBGA-106 | 82-FBGA |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | 0C to +85C | 0 C to 85 C |
| On-Die ECC | Yes | Yes (per JEDEC DDR5 specification) |
| Write CRC | Yes | — |
| Write Leveling | Yes | — |
| Auto Self-Refresh | Yes | — |
| Asynchronous Reset | Yes | — |
| Operating Mode | DLL Enabled | — |
| RoHS-Status | Compliant | [DATA_NEEDED: RoHS status] |
| Lead Free | Yes | — |
| MSL-Level | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: moisture sensitivity level] |
| Refresh Rate | [DATA_NEEDED: Refresh Rate] | — |
| Versorgungsspannung | — | 1.1 V |
| Datenrate | — | [DATA_NEEDED: data rate for K4RBH speed grade (sister K4RAH086VB grade is 5600 Mbps)] |
| Schnittstelle | — | Parallel, DDR5 |
| Product Status | — | Mass Production |
| Memory Format | — | Volatile (DRAM) |
| Technology | — | DDR5 SDRAM |
| Manufacturer | — | Samsung Semiconductor |