K4RCH046VM-2CCM vs K4RCH046VM-2CLP Vergleich
Detaillierter Direktvergleich von K4RCH046VM-2CCM von Samsung Electronics und K4RCH046VM-2CLP von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4RCH046VM-2CCM | K4RCH046VM-2CLP |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | NRND | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $10,10 |
| Speichertyp | DDR5 SDRAM | DDR5 SDRAM |
| Density | 32 Gb | 32 Gb |
| Speicherorganisation | 4G x 4 | 4G x 4 |
| Datenrate | 5600 Mbps | 6400 Mbps |
| Versorgungsspannung | 1.1 V | 1.1 V |
| Betriebstemperatur | 0 to 85 C | 0C to 85C |
| Gehäuse | 78-ball FBGA | 78-FBGA |
| Montageart | Surface Mount | Surface Mount |
| Product Status | Sample | — |
| Access Latency (CL) | [DATA_NEEDED: CAS latency] | — |
| Refresh Rate | [DATA_NEEDED: refresh rate] | — |
| Schnittstellentyp | [DATA_NEEDED: interface type] | — |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| RoHS-Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| On-Die ECC | [DATA_NEEDED: on-die ECC support] | — |
| Configuration | — | x4 component |
| Schnittstelle | — | DDR5 (SSTL-style low-voltage signaling) |
| Family Speed Range (Samsung DDR5) | — | up to 7200 Mbps |
| Family Density Range (Samsung DDR5) | — | 16 Gb to 32 Gb |
| Power Efficiency vs DDR4 | — | Approx. 30% greater |
| Product Status (per distributor listing) | — | Sample / Active supply via distribution |