K4RHE086VB-BCWM vs K4RAH086VB-BIWM Vergleich
Detaillierter Direktvergleich von K4RHE086VB-BCWM von Samsung Electronics und K4RAH086VB-BIWM von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4RHE086VB-BCWM | K4RAH086VB-BIWM |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $7,65 | $4,85 |
| Speichertyp | DDR5 SDRAM | DDR5 SDRAM |
| Density | 24 Gb | 16 Gb |
| Speicherorganisation | 2G x 8 | [DATA_NEEDED: organization x4/x8] |
| Datenrate | 5600 Mbps | 5600 Mbps per pin |
| Versorgungsspannung | 1.1 V | [DATA_NEEDED: VDD voltage] |
| Gehäuse | 82 FBGA | — |
| Montageart | Surface Mount | Surface Mount |
| Schnittstelle | DDR5 (JEDEC) | — |
| Configuration | x8 | — |
| Application Segment | Server / Data Center / Premium PC | — |
| Manufacturer | Samsung Semiconductor | — |
| RoHS-Status | unknown | [DATA_NEEDED: RoHS status] |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: temperature range] |
| Access Time / CAS Latency | [DATA_NEEDED: CAS latency] | — |
| On-Die ECC | [DATA_NEEDED: on-die ECC support] | — |
| Package Height | [DATA_NEEDED: package height] | — |
| Package Type | — | [DATA_NEEDED: package (FBGA, ball count)] |
| Bank Groups | — | [DATA_NEEDED: bank group count] |
| CAS Latency (CWL) | — | Programmable (per Samsung DDR5 16Gb B-die spec) |
| DLL | — | DLL Enabled mode operation |
| On-Die Termination | — | Yes (via Mode Register setting) |
| Internal Calibration | — | Yes (via MPC) |
| Asynchronous Reset | — | Yes |
| Posted CAS | — | Yes |
| Maximum Data Rate (family, per spec Rev1.0) | — | 4800 Mbps per pin (DDR5-4800, general applications) |