K4RHE086VP vs K4RAH086VE-BCWM Vergleich
Detaillierter Direktvergleich von K4RHE086VP von Samsung Electronics und K4RAH086VE-BCWM von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K4RAH086VE-BCWM - DDR5 16Gb 5600Mbps DRAM | Samsung Electronics
K4RAH086VE-BCWM ✓ AktivSpezifikationsvergleich
| Parameter | K4RHE086VP | K4RAH086VE-BCWM |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | DDR5 | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $9,90 | $7,60 |
| Speichertyp | DDR5 SDRAM | DDR5 SDRAM |
| Density | 24 Gb | 16 Gb |
| Speicherorganisation | x8 | 2G x 8 |
| Process Node | 1a-class (D1a) | — |
| Package Type | FBGA | — |
| Montageart | Surface Mount | Surface Mount |
| Schnittstellentyp | DDR5 (double data rate 5) | — |
| Maximum Data Rate | [DATA_NEEDED: speed bin data rate] | — |
| Supply Voltage (VDD) | [DATA_NEEDED: VDD in V] | 1.1 V |
| On-Die ECC | Yes (DDR5 standard feature) | — |
| Bank Groups | [DATA_NEEDED: bank group count] | [DATA_NEEDED: bank group count] |
| Betriebstemperaturbereich | [DATA_NEEDED: temperature range] | — |
| Marke | Samsung Electronics | — |
| Product Family | Samsung K4RHE DDR5 series | — |
| Typical Application | Server / client DRAM modules | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Datenrate | — | 5600 Mbps |
| Gehäuse | — | 82-ball FBGA |
| Betriebstemperatur | — | 0C to +85C |
| Generation | — | DDR5 |
| CAS-Latenz | — | [DATA_NEEDED: CL at 5600 Mbps] |
| VDDQ Voltage | — | [DATA_NEEDED: VDDQ value] |
| Refresh | — | [DATA_NEEDED: refresh rate] |
| Lebenszyklusstatus | — | Mass Production |
| Manufacturer | — | Samsung Electronics |