K9HQGY8S5M vs K9PKGY8S7M-CCK0 Vergleich
Detaillierter Direktvergleich von K9HQGY8S5M von Samsung Electronics und K9PKGY8S7M-CCK0 von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage
K9HQGY8S5M ✓ Aktiv
Spezifikationsvergleich
| Parameter | K9HQGY8S5M | K9PKGY8S7M-CCK0 |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $9,40 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | 3D V-NAND Flash Memory (stacked, client NAND) | — |
| Package Type | 316-ball Fine Pitch BGA (FBGA-316) | — |
| Die Configuration | 4 x K9ADGD8S0A V-NAND dies (per TechInsights package analysis) | — |
| NAND Technology | 32-layer pMLC 3D V-NAND (per Samsung 850 Pro 256 GB analysis) | — |
| Memory Class | Non-volatile NAND flash | — |
| Schnittstelle | NAND (ONFI/Toggle-style asynchronous interface) - exact timing mode [DATA_NEEDED: interface timing mode] | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) |
| Density | [DATA_NEEDED: total bit density] | — |
| Versorgungsspannung | [DATA_NEEDED: VCC range] | [DATA_NEEDED: supply voltage] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance rating] | [DATA_NEEDED: P/E cycle endurance] |
| Montageart | Surface Mount (BGA) | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Lead free / RoHS compliant |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Original Application | Samsung SSD 850 Pro solid-state drive | — |
| Memory Capacity | — | 128 Gb (16 GB) |
| Speichertyp | — | NAND Flash |
| Cell Architecture | — | 3D V-NAND, MLC (2 bits/cell) |
| V-NAND Layers | — | 24 layers |
| Gehäuse | — | BGA |
| Application Domain | — | Enterprise SSD (e.g., Samsung 845DC Pro) |
| Access Time (tR) | — | [DATA_NEEDED: read cycle time] |
| Data Retention | — | [DATA_NEEDED: retention specification] |