K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage
Teilenummer: K9HQGY8S5M ✓ Aktiv| Menge | Stückpreis | Gesamt |
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| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
K9HQGY8S5M Übersicht
NAND flash is a non-volatile memory technology that retains data without power and forms the storage hierarchy layer beneath DRAM and above permanent media in computing systems. Within that hierarchy, V-NAND (vertical NAND) stacks memory cells vertically rather than shrinking cells laterally, increasing bit density while improving endurance and write performance compared to planar NAND.
Key characteristics of the K9HQGY8S5M include its multi-die stacked architecture (four K9ADGD8S0A dies per package), 316-ball FBGA surface-mount packaging, and its use of 32-layer pMLC (premium multi-level cell / charge-trap 3D NAND) technology as reported in the Samsung 850 Pro 256 GB SSD teardowns. The pMLC 3D V-NAND used in the 850 Pro delivers substantially higher program/erase endurance than contemporary planar TLC NAND, which is why Samsung selected it for its flagship endurance-focused SSD line.
The device communicates over a standard ONFI-style NAND interface with the SSD controller (in the 850 Pro, the Samsung MEX / S4LN045X01 controller), supporting page-read, page-program, block-erase, and multi-plane operations typical of toggle/ONFI NAND families. Multiple dies within the package enable multi-die interleaving for higher effective bandwidth.
Typical applications include enterprise and client SSD storage modules, embedded storage assemblies, storage research, and board-level repair or component-level recovery of Samsung 850 Pro drives. The device is also used in reverse-engineering and package-analysis studies of 3D NAND stacking techniques.
Design consideration: because this is a component-sourcing (client) NAND part rather than a cataloged standard-product NAND, designers should validate ONFI/toggle timing compatibility and die configuration against the actual firmware environment before substitution; ballout documentation is not publicly released by Samsung.
This page synthesizes distributor sourcing channels, package-analysis findings, and drop-in alternative context not found in any single datasheet.
Drop-in-Alternativen für K9HQGY8S5M – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit K9HQGY8S5M (gleiche Bauform und Footprint) – abweichend in Memory Type, Product Family, Product Type, Mounting Type, RoHS Status.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
K9LPGY8S1M
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
K9PRGY8S7M
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
Preis auf Anfrage
Datenblatt ansehen →K9HQGY8S5M Grenzwerte & elektrische Eigenschaften
| Manufacturer | Samsung Electronics |
| Product Type | 3D V-NAND Flash Memory (stacked, client NAND) |
| Package Type | 316-ball Fine Pitch BGA (FBGA-316) |
| Die Configuration | 4 x K9ADGD8S0A V-NAND dies (per TechInsights package analysis) |
| NAND Technology | 32-layer pMLC 3D V-NAND (per Samsung 850 Pro 256 GB analysis) |
| Memory Class | Non-volatile NAND flash |
| Montageart | Surface Mount (BGA) |
| Original Application | Samsung SSD 850 Pro solid-state drive |
K9HQGY8S5M 316-ball fine pitch bga (fbga-316) Pinbelegungsleitfaden
Pinbelegung für K9HQGY8S5M (316-ball fine pitch bga (fbga-316)-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.
Keine detaillierten Pinbelegungsdaten verfügbar für K9HQGY8S5M.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
K9HQGY8S5M ist geeignet für 6 Anwendungs: Samsung SSD 850 Pro Storage, NAND Package Analysis and Reverse Engineering, Board-Level SSD Repair Services, Data Recovery and Chip-Off Forensics, Embedded Storage Prototyping, Enterprise Storage Long-Tail Maintenance.
Samsung SSD 850 Pro Storage
The K9HQGY8S5M is the original NAND component of the Samsung SSD 850 Pro 256 GB, paired with the Samsung MEX (S4LN045X01) SATA 6 Gbps controller and external DRAM cache. Its 32-layer pMLC 3D V-NAND technology was chosen by Samsung specifically for the 850 Pro's endurance-focused positioning: charge-trap 3D cells exhibit lower cell-to-cell interference than planar TLC, allowing higher program/erase endurance. In the drive, multiple dies inside each 316-ball FBGA are interleaved by the controller to raise effective bandwidth. Technicians performing board-level repair or component recovery on 850 Pro drives work directly with this package, requiring reball-and-reflow BGA equipment. Controller translation-table metadata resides in the NAND, so chip-off reading rather than NAND replacement is preferred for data recovery.
Empfohlen
NAND Package Analysis and Reverse Engineering
The K9HQGY8S5M serves as a reference device for package-analysis studies of early 3D NAND stacking. TechInsights report pkg-1407-802 documents its 316-ball FBGA construction and four-die K9ADGD8S0A stacking, and REATISS performed process analysis on the same device. Labs use such parts to study die-attach methods, through-silicon-via or wire-bond stacking schemes, charge-trap cell structure, and process nodes of first-generation vertical NAND. The value of this device for analysis is that its provenance (850 Pro) and die identity are fully documented, making cross-lab comparisons reproducible. For this use, decapsulation, delayering, and SEM/TEM imaging workflows are typical, and the part's known pMLC 32-layer technology provides a calibration reference against later-generation V-NAND devices.
Empfohlen
Board-Level SSD Repair Services
Independent repair shops use the K9HQGY8S5M to replace failed NAND packages on Samsung 850 Pro PCBs. The 316-ball FBGA requires precision reballing stencils, controlled-profile reflow, and post-repair controller re-initialization. Because the 850 Pro's MEX controller stores FTL (flash translation layer) metadata in NAND, a replaced package changes the drive's mapping data; successful repair therefore typically involves pairing replacement NAND with the original controller state or accepting a fresh low-level format. Stock from brokers such as OMO Electronic and IC2IC enables same-week repair turnaround versus months of factory service. Shops should match date codes across all NAND packages in the drive where possible to minimize timing variance across channels.
Empfohlen
Data Recovery and Chip-Off Forensics
Forensic and data-recovery labs remove the K9HQGY8S5M from 850 Pro drives via hot-air or infrared BGA rework, then read the four internal K9ADGD8S0A dies on dedicated NAND readers. Because the package stacks four dies, the reader must address each die target independently, and controller-scrambled data (XOR interleaving and scrambling keys managed by the MEX controller) must be reversed before file-system reconstruction. The known 32-layer pMLC cell characteristics help labs set correct read-retry voltage thresholds for worn cells. As of 2026-09-04, this part remains a common specimen in 850 Pro recovery jobs because the 850 Pro retains a large installed base of endurance-sensitive enterprise and prosumer users.
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Embedded Storage Prototyping
Universities and storage-controller startups use recovered K9HQGY8S5M packages to prototype NAND controller firmware against real first-generation 3D V-NAND silicon. Its asynchronous NAND-style interface lets engineers exercise ONFI/Toggle command sequences, multi-die interleaving, and plane operations without waiting for cataloged NAND supply. The engineering caveat is that Samsung never published the ballout or AC timing tables for this client part, so teams derive pin maps from 850 Pro schematic references and validate timing empirically with scope measurements. This makes the device best suited to research and education rather than production designs, where published-spec catalog NAND remains the appropriate choice for new embedded products.
Empfohlen
Enterprise Storage Long-Tail Maintenance
Organizations maintaining fleets of Samsung 850 Pro-based storage maintain small K9HQGY8S5M inventories as spares for solder-down repair of out-of-warranty drives. The pMLC V-NAND's endurance advantage over planar TLC made the 850 Pro a popular enterprise-client drive, so spares demand persists years after the product's retail lifecycle. Procurement teams source through brokers (OMO Electronic, Kynix, IC2IC) with incoming inspection for date-code matching, counterfeit screening, and ball-condition checks. As of 2026-09-04 stock is available with immediate shipment, but buyers should qualify multiple brokers since Samsung's authorized channel no longer carries this client NAND generation.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für K9HQGY8S5M – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | K9LPGY8S1M | K9PRGY8S7M |
|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| NAND Technology | 32-layer pMLC 3D V-NAND | 3D V-NAND (same first generation) | Later-generation 3D V-NAND |
| Original Platform | Samsung SSD 850 Pro | Samsung SSD 850 Pro platform | Current V-NAND product line |
| Availability Channel | Independent brokers (in stock, as of 2026-09-04) | Independent brokers / teardown sources | XAIPART product page available |
Wichtigste Unterscheidungsmerkmale
- First-generation 32-layer pMLC 3D V-NAND with documented provenance (vs. K9LPGY8S1M)
- Endurance-oriented pMLC cell technology (vs. K9PRGY8S7M)
- Exact-fit repair part for Samsung 850 Pro (vs. K9LPGY8S1M)
Designhinweise
Do not treat the K9HQGY8S5M as a cataloged standard-product NAND: Samsung publishes no ballout, AC timing, or density documentation for this client part. All public technical knowledge derives from the TechInsights package analysis (pkg-1407-802) and 850 Pro teardowns. Any design-in requires empirical timing validation and a pin map derived from the 850 Pro reference layout. Severity: critical for anyone attempting new designs with broker-sourced parts.
The 316-ball fine-pitch BGA demands controlled reflow (lead-free profile recommended) and matching fanout as used on the Samsung 850 Pro PCB. For repair work, use a dedicated reballing stencil for the 316-ball pattern and verify coplanarity before placement. Estimated: BGA rework on a 4-die stacked package is more heat-sensitive than single-die NAND, so a gentler preheat ramp is advisable to avoid die-attach delamination.
When reusing or emulating the 850 Pro interface, follow Samsung MEX controller routing practices: length-match the NAND data bus within tight skew budgets and keep CE/RLE/WRE control lines short. The four stacked K9ADGD8S0A dies share the package ball interface, so die-select (CE) timing and interleaved command sequencing must match controller firmware expectations; mismatched timing typically manifests as read-retry failures rather than hard errors.
Compliance-Informationen
No compliance documentation was found in the provided verified web data for this client NAND component. Confirm RoHS/REACH status with the broker or Samsung directly before design-in.
