K9JUGY8J5C-BCK0 vs K9NUGY8R6B-BCQ0 Vergleich

Detaillierter Direktvergleich von K9JUGY8J5C-BCK0 von Samsung Electronics und K9NUGY8R6B-BCQ0 von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Samsung Electronics
K9JUGY8J5C-BCK0 K9JUGY8J5C-BCK0 - 1Tb TLC V-NAND Flash | Samsung

K9JUGY8J5C-BCK0 - 1Tb TLC V-NAND Flash | Samsung

K9JUGY8J5C-BCK0 ✓ Aktiv
Samsung Electronics
K9NUGY8R6B-BCQ0 K9NUGY8R6B-BCQ0 - Samsung NAND Flash Memory | Samsung Electronics

K9NUGY8R6B-BCQ0 - Samsung NAND Flash Memory | Samsung Electronics

K9NUGY8R6B-BCQ0 ✓ Aktiv

Spezifikationsvergleich

Parameter K9JUGY8J5C-BCK0 K9NUGY8R6B-BCQ0
Marke Samsung Electronics Samsung Electronics
Kategorie Flash Memory ICs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,00 $0,00
Speichertyp NAND Flash (V-NAND TLC) NAND Flash
Density 1 Tb [DATA_NEEDED: total density]
Cell Type Triple-Level Cell (TLC) —
Technology Samsung V-NAND (3D) —
Speicherorganisation [DATA_NEEDED: page/block organization] [DATA_NEEDED: page/block organization]
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: block size]
Schnittstelle [DATA_NEEDED: async/DDR or Toggle DDR interface and mode] Asynchronous NAND I/O (command/address/data multiplexed)
Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
Supply Voltage (VCCQ) [DATA_NEEDED: VCCQ range] —
Program Time (typ) [DATA_NEEDED: tPROG] —
Read Time (typ) [DATA_NEEDED: tR] —
Gehäuse [DATA_NEEDED: FBGA ball count / package code] —
Betriebstemperatur [DATA_NEEDED: operating temperature range] [DATA_NEEDED: temperature range]
Endurance (P/E cycles) [DATA_NEEDED: program/erase endurance] —
Data Retention [DATA_NEEDED: retention specification] [DATA_NEEDED: retention]
RoHS-Status Compliant unknown
Montageart Surface Mount Surface Mount
Manufacturer — Samsung Electronics
Product Family — K9NUGY series NAND flash
Cell Technology — [DATA_NEEDED: SLC/MLC/TLC]
Supply Voltage VCC — [DATA_NEEDED: VCC range]
VCCQ Voltage — [DATA_NEEDED: VCCQ range]
Page Read Time — [DATA_NEEDED: tR]
Page Program Time — [DATA_NEEDED: tPROG]
Block Erase Time — [DATA_NEEDED: tBERS]
Program/Erase Cycles — [DATA_NEEDED: endurance]
Package Type — [DATA_NEEDED: package code]

Datenblätter & Ressourcen

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