K9JUGY8J5C-BCK0 - 1Tb TLC V-NAND Flash | Samsung
Teilenummer: K9JUGY8J5C-BCK0 ✓ Aktiv| Menge | Stückpreis | Gesamt |
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K9JUGY8J5C-BCK0 Übersicht
NAND flash memory is a type of non-volatile storage that retains data without power and is organized into blocks and pages that are erased and programmed in bulk. Within the memory hierarchy, NAND flash sits at the mass-storage layer beneath DRAM and is the dominant technology behind SSDs, eMMC/UFS modules, memory cards, and embedded storage. TLC devices store three bits per cell, maximizing bit density and lowering cost per gigabyte relative to MLC or SLC designs.
Key characteristics of this family include the high 1Tb die capacity, which allows SSD controllers to reach multi-terabyte capacities with fewer packages, and Samsung's V-NAND structure that connects cells vertically, reducing cell-to-cell interference compared to planar NAND. Interface, page size, block organization, supply voltage, and timing parameters follow the ONFI-style asynchronous/DDRToggle conventions typical of Samsung U-generation TLC devices.
Architecturally, V-NAND stacks charge-trap cells vertically over a common bitline structure, which improves endurance scaling and read-disturb behavior at high stack counts. TLC operation requires strong ECC (LDPC) support in the host controller, along with careful wear-leveling and SLC-cache strategies for write acceleration.
Typical applications include client and enterprise SSDs, embedded storage modules, USB flash drives, memory cards, and set-top or surveillance storage. When designing with this device, verify the exact package ball map, voltage class, and ONFI/Toggle mode support directly against the Samsung datasheet for the specific speed grade, since suffix codes denote temperature and package variants.
Designers should budget controller ECC capability and firmware overhead appropriate for TLC endurance and validate R/W timing margins at target temperatures.
This page synthesizes sourcing guidance, same-family drop-in candidates, and practical design notes not found on distributor listing pages.
Drop-in-Alternativen für K9JUGY8J5C-BCK0 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit K9JUGY8J5C-BCK0 (gleiche Bauform und Footprint) – abweichend in Memory Type, Cell Type, Technology, RoHS Status, Density.
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K9IUGY8J7B-CCK0
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Datenblatt ansehen →K9JUGY8J5C-BCK0 Technische Daten
| Speichertyp | NAND Flash (V-NAND TLC) |
| Density | 1 Tb |
| Cell Type | Triple-Level Cell (TLC) |
| Technology | Samsung V-NAND (3D) |
| RoHS-Status | Compliant |
| Montageart | Surface Mount |
K9JUGY8J5C-BCK0 standard Pinbelegungsleitfaden
Pinbelegung für K9JUGY8J5C-BCK0 (standard-Gehäuse). Pin-Nummerierung, Funktionen und Anschlussdiagramme sind im Herstellerdatenblatt definiert. Entnehmen Sie diesem den genauen Footprint und Lötrichtlinien.
Keine detaillierten Pinbelegungsdaten verfügbar für K9JUGY8J5C-BCK0.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
K9JUGY8J5C-BCK0 ist geeignet für 6 Anwendungs: Client SSD Storage, Embedded Storage (eMMC/UFS-class designs), Surveillance and Video Recording Storage, USB Flash Drives and Memory Cards, Set-Top Box and Smart Home Hub Storage, Industrial and IoT Data Loggers.
Client SSD Storage
The K9JUGY8J5C-BCK0's 1Tb TLC capacity makes it a natural building block for client PCIe and SATA SSDs, where 16 packages yield 2 TB raw capacity on a compact PCB. Samsung V-NAND's vertical cell structure reduces cell-to-cell interference, supporting the tight read-voltage margins TLC demands. In an SSD, the NAND connects to the controller over Toggle DDR or asynchronous interfaces with LDPC ECC offload. Compared to lower-density dies, the 1Tb device reduces package count, lowering BOM cost and improving channel interleaving for higher sequential throughput.
Empfohlen
Embedded Storage (eMMC/UFS-class designs)
High-density TLC NAND such as K9JUGY8J5C-BCK0 underpins embedded storage modules for smart devices, automotive infotainment, and industrial gateways. The 1Tb density allows module makers to reach 64-256 GB in a small stacked footprint, while Samsung V-NAND tolerances support the multi-bit-per-cell operation these modules require. Designers should pair the NAND with a controller providing SLC-cache emulation and LDPC ECC sized to TLC raw BER. The trade-off versus eMMC integrated solutions is flexibility: raw NAND enables custom firmware, capacity tiers, and cost tuning.
Empfohlen
Surveillance and Video Recording Storage
Continuous video write workloads in surveillance DVR/NVR systems favor high-density TLC NAND like the K9JUGY8J5C-BCK0 because cost per terabyte dominates system economics. A controller with wear-leveling spreads the heavy sequential write load across the 1Tb array, and SLC-cache buffering absorbs burst writes from multiple camera streams. Samsung V-NAND's improved read-disturb behavior helps sustain data integrity under 24/7 operation. Retention and endurance at elevated ambient temperatures should be validated against the datasheet grade selected for the deployment environment.
Empfohlen
USB Flash Drives and Memory Cards
Consumer removable storage benefits directly from the K9JUGY8J5C-BCK0's 1Tb density: a single die enables 128 GB-class drives with minimal component count, reducing thickness and cost. TLC's high density keeps bill-of-materials cost per gigabyte low, which is essential in the price-sensitive flash-card market. Controller firmware must implement SLC-cache writes to deliver responsive user-level performance and LDPC ECC to meet TLC data-retention requirements. Samsung V-NAND process maturity supports the volume manufacturing model these consumer products demand.
Empfohlen
Set-Top Box and Smart Home Hub Storage
Set-top boxes and smart home hubs store operating systems, DVR buffers, and application data on TLC NAND, where the K9JUGY8J5C-BCK0's 1Tb die provides headroom for feature-rich firmware and local recording. The device's V-NAND architecture supports the frequent small-block rewrites typical of EPG caching and app updates, provided the controller applies journaling and wear leveling. Power-loss protection strategy (firmware flush and power-fail recovery) is more critical than in client SSDs because these devices are routinely unplugged.
Empfohlen
Industrial and IoT Data Loggers
Industrial gateways and IoT recorders use high-density TLC NAND for local event and telemetry logging, and the K9JUGY8J5C-BCK0's 1Tb capacity supports long retention windows between uplink opportunities. Designers must verify the operating temperature suffix and derate TLC retention expectations at temperature extremes, adding controller-level periodic data refresh where required. V-NAND's stable cell characteristics aid long-idle retention compared to dense planar TLC. Firmware should include power-fail-safe journaling, as industrial power is unreliable and write interruptions are routine.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für K9JUGY8J5C-BCK0 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | K9IUGY8J7B-CCK0 | K9HUGY8J5B-CCK0 | K9HUGY8J5B-BCK0 |
|---|---|---|---|---|
| Package | FBGA (ball count per Samsung datasheet) | FBGA (per Samsung datasheet) | FBGA (per Samsung datasheet) | FBGA (per Samsung datasheet) |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Technology | V-NAND (3D) | V-NAND (3D) | V-NAND (3D) | V-NAND (3D) |
Wichtigste Unterscheidungsmerkmale
- Latest listed U-generation density per package (vs. K9HUGY8J5B-CCK0)
- 1Tb TLC density reduces package count (vs. K9IUGY8J7B-CCK0)
- Trade-off: TLC endurance vs MLC/SLC (vs. K9HUGY8J5B-BCK0)
Designhinweise
Never assume ball-map compatibility between Samsung NAND generations. The K9JUGY8J5C (U-generation), K9IUGY8J7B (I-generation), and K9HUGY8J5B (H-generation) families may share FBGA outline dimensions while differing in ball assignments or supply-ball positions. Before reuse of an existing footprint, overlay the two Samsung datasheet ball maps ball-by-ball and confirm VCC/VCCQ/GND positions are identical. A mismatch discovered post-fabrication requires board respin, not just firmware changes.
Provide independently regulated, sequenced supplies for VCC and VCCQ per the Samsung datasheet power-up requirements, with decoupling of at least 100 nF ceramic per supply ball group plus bulk capacitance sized for program-operation current surges. NAND program and erase operations draw burst currents that can droop an undersized rail and corrupt the in-flight program. Verify peak current figures in the datasheet and estimate rail droop with your regulator's transient response; these droop calculations are design estimates, not datasheet values.
In Toggle DDR mode, route DQ0-DQ7 and DQS as length-matched groups with series termination near the controller; keep traces within the datasheet-specified maximum length for the target interface speed grade. For asynchronous mode at lower speeds, relax matching but retain 22-33 ohm series resistors to control ringing on the open-drain RE/WE control lines. Simulate eye diagrams at the interface VCCQ level before tape-out; SI margins are estimates from layout practice, not guaranteed by the memory datasheet.
TLC NAND requires LDPC ECC with firmware-managed read retry. Do not qualify K9JUGY8J5C-BCK0 on a controller designed for planar MLC with BCH ECC - raw TLC bit error rates exceed BCH correction capability, especially on read-disturb-prone cold data. Confirm the U-generation ID and ONFI-style parameter page are in your controller's supported-device table, and reserve firmware margin for Samsung read-voltage-shift retry tables.
Compliance-Informationen
RoHS compliance consistent with Samsung current-generation V-NAND packaging policy; formal per-suffix material declarations available from the Samsung Semiconductor compliance portal.
