K9KUGY8J7C-BCK0 vs K9LUGY8J7D-CCK0 Vergleich
Detaillierter Direktvergleich von K9KUGY8J7C-BCK0 von Samsung Electronics und K9LUGY8J7D-CCK0 von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K9KUGY8J7C-BCK0 - 1Tb TLC NAND Flash Memory | Samsung Electronics
K9KUGY8J7C-BCK0 ✓ AktivSamsung Electronics
K9LUGY8J7D-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics
K9LUGY8J7D-CCK0 ✓ AktivSpezifikationsvergleich
| Parameter | K9KUGY8J7C-BCK0 | K9LUGY8J7D-CCK0 |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $9,55 | $0,00 |
| Speichertyp | NAND Flash (TLC V-NAND) | NAND Flash (V-NAND) |
| Density | 1 Tb | [DATA_NEEDED: total density (bits)] |
| Speicherorganisation | [DATA_NEEDED: page/block organization] | — |
| Cell Type | TLC (3 bits/cell) | — |
| Schnittstellentyp | [DATA_NEEDED: toggle DDR / ONFI mode] | — |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC range in V] | — |
| Supply Voltage (VCCQ) | [DATA_NEEDED: VCCQ range in V] | — |
| Page Size | [DATA_NEEDED: page size in KB] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance] | — |
| Package Type | BGA | — |
| Package Code | [DATA_NEEDED: package code / ball count] | — |
| Betriebstemperatur | [DATA_NEEDED: temperature range in C] | [DATA_NEEDED: temperature range (C)] |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | [DATA_NEEDED: RoHS status] |
| Grade Suffix | BCK0 | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Memory Cell Type | — | TLC (Triple-Level Cell) |
| Technology | — | V-NAND (vertical NAND) |
| Gehäuse | — | BGA (surface mount) |
| Schnittstelle | — | [DATA_NEEDED: interface type / toggle DDR mode] |
| Versorgungsspannung | — | [DATA_NEEDED: supply voltage (V)] |
| Program/Erase Endurance | — | [DATA_NEEDED: P/E cycles] |
| Data Retention | — | [DATA_NEEDED: retention] |
| Speed Grade Code | — | CCK0 (per Samsung part-number convention) |