K9KUGY8J7C-CCK0 vs K9MUGY8R4A-CCQ0 Vergleich
Detaillierter Direktvergleich von K9KUGY8J7C-CCK0 von Samsung Electronics und K9MUGY8R4A-CCQ0 von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K9KUGY8J7C-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics
K9KUGY8J7C-CCK0 ✓ AktivSamsung Electronics
K9MUGY8R4A-CCQ0 - Samsung V-NAND Flash Memory | Samsung Electronics
K9MUGY8R4A-CCQ0 ✓ AktivSpezifikationsvergleich
| Parameter | K9KUGY8J7C-CCK0 | K9MUGY8R4A-CCQ0 |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $0,00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Family | K9-Series V-NAND | K9 V-NAND (NAND Flash) |
| Speichertyp | NAND Flash | — |
| Cell Type | TLC (Triple-Level Cell) | [DATA_NEEDED: cell type (MLC/TLC)] |
| Technology | Samsung V-NAND (3D NAND) | — |
| Density | [DATA_NEEDED: total device density] | [DATA_NEEDED: total density] |
| Speicherorganisation | [DATA_NEEDED: page/block/plane organization] | [DATA_NEEDED: page/block organization] |
| Schnittstelle | [DATA_NEEDED: asynchronous/synchronous toggle interface mode] | — |
| Versorgungsspannung | [DATA_NEEDED: VCC supply voltage range] | — |
| Page Size | [DATA_NEEDED: page size] | — |
| Program/Erase Cycles | [DATA_NEEDED: endurance rating] | — |
| Package Type | BGA | [DATA_NEEDED: package type and pin count] |
| Betriebstemperatur | Commercial grade (per -CCK0 suffix); exact range [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Lead free / RoHS (per Samsung K9-family product pages) | [DATA_NEEDED: RoHS status] |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Memory Technology | — | V-NAND (vertical NAND flash) |
| Schnittstellentyp | — | [DATA_NEEDED: interface (Toggle DDR/ONFI)] |
| Maximum I/O Speed | — | [DATA_NEEDED: data transfer rate] |
| Supply Voltage - VCC | — | [DATA_NEEDED: VCC range] |
| Supply Voltage - VCCQ | — | [DATA_NEEDED: VCCQ range] |
| Page Program Time (typ) | — | [DATA_NEEDED: tPROG] |
| Block Erase Time (typ) | — | [DATA_NEEDED: tBERS] |
| Endurance (P/E cycles) | — | [DATA_NEEDED: endurance] |