K9KUGY8J7C-CCK0 vs K9MUGY8R4A-CCQ0 Comparaison
Comparaison détaillée côte à côte de K9KUGY8J7C-CCK0 par Samsung Electronics et K9MUGY8R4A-CCQ0 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K9KUGY8J7C-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics
K9KUGY8J7C-CCK0 ✓ ActifSamsung Electronics
K9MUGY8R4A-CCQ0 - Samsung V-NAND Flash Memory | Samsung Electronics
K9MUGY8R4A-CCQ0 ✓ ActifComparaison des spécifications
| Paramètre | K9KUGY8J7C-CCK0 | K9MUGY8R4A-CCQ0 |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $0,00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Family | K9-Series V-NAND | K9 V-NAND (NAND Flash) |
| Type de mémoire | NAND Flash | — |
| Cell Type | TLC (Triple-Level Cell) | [DATA_NEEDED: cell type (MLC/TLC)] |
| Technology | Samsung V-NAND (3D NAND) | — |
| Density | [DATA_NEEDED: total device density] | [DATA_NEEDED: total density] |
| Organisation de la mémoire | [DATA_NEEDED: page/block/plane organization] | [DATA_NEEDED: page/block organization] |
| Interface | [DATA_NEEDED: asynchronous/synchronous toggle interface mode] | — |
| Tension d'alimentation | [DATA_NEEDED: VCC supply voltage range] | — |
| Page Size | [DATA_NEEDED: page size] | — |
| Program/Erase Cycles | [DATA_NEEDED: endurance rating] | — |
| Package Type | BGA | [DATA_NEEDED: package type and pin count] |
| Température de fonctionnement | Commercial grade (per -CCK0 suffix); exact range [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Type de montage | Surface Mount | Surface Mount |
| Statut RoHS | Lead free / RoHS (per Samsung K9-family product pages) | [DATA_NEEDED: RoHS status] |
| Niveau MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Memory Technology | — | V-NAND (vertical NAND flash) |
| Type d'interface | — | [DATA_NEEDED: interface (Toggle DDR/ONFI)] |
| Maximum I/O Speed | — | [DATA_NEEDED: data transfer rate] |
| Supply Voltage - VCC | — | [DATA_NEEDED: VCC range] |
| Supply Voltage - VCCQ | — | [DATA_NEEDED: VCCQ range] |
| Page Program Time (typ) | — | [DATA_NEEDED: tPROG] |
| Block Erase Time (typ) | — | [DATA_NEEDED: tBERS] |
| Endurance (P/E cycles) | — | [DATA_NEEDED: endurance] |