L9779WD vs L9679P Vergleich

Detaillierter Direktvergleich von L9779WD von STMicroelectronics und L9679P von STMicroelectronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter L9779WD L9679P
Marke STMicroelectronics STMicroelectronics
Kategorie Power MOSFET Drivers Specialized PMIC
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $5,85 $6,18
Manufacturer STMicroelectronics —
Part Number L9779WD —
Description Multifunction IC for engine management system —
Technology BCD6S —
Gehäuse 64-pin HiQUAD power package 100-TQFP (14x14 mm)
Montageart Surface Mount (Power Package) Surface Mount
Supply Voltage (VSUP) 6 V to 18 V (40 V transient) —
5V MCU Regulator 5 V nominal, up to 250 mA —
5V Sensor Supply 5 V nominal, up to 150 mA —
Communication Interface SPI (serial peripheral interface) SPI (4-wire, configurable)
Watchdog SPI challenge/response with Markov chain Internal window watchdog
Injection Predrivers 4 channels (INJ1-INJ4) —
Ignition Predrivers Integrated —
Stepper Predriver 2 channels (idle air control / throttle) —
Relay Drivers Main relay, oil/oxygen sensor relay —
Tachometer / Hall Input TACH —
Reverse Battery Protection External diode on KEY_ON (internal pull-down) —
Betriebstemperatur -40 C to +150 C (junction) -40 C to +125 C (AEC-Q100)
Qualification AEC-Q100 automotive grade —
RoHS-Status Compliant Compliant
Funktion — Automotive advanced airbag IC for mid/high-end applications
Pin-Anzahl — 100
Pitch — 0.5 mm
Versorgungsspannung — 5 V to 18 V nominal; up to 40 V transient
Battery Voltage Range — 6 V to 18 V (extended 4 V to 40 V for cold-crank and load-dump)
Squib Driver Channels — 4 high-side / low-side channels
Sensor Interface — Up to 4 analog sensor channels
Diagnostic Features — Squib resistance measurement, short-to-battery / short-to-ground detection, open-load detection
Automotive Qualification — AEC-Q100 qualified
Process Technology — BCD (Bipolar-CMOS-DMOS)
MSL-Level — 3 (168 hours)

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