LTC2145CUP-12 vs LTC2216IUP Vergleich
Detaillierter Direktvergleich von LTC2145CUP-12 von Analog Devices und LTC2216IUP von Analog Devices. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Analog Devices
LTC2145CUP-12 - 12-Bit 125Msps Dual ADC, 1.8V, 64-QFN | Analog Devices
LTC2145CUP-12 ✓ AktivSpezifikationsvergleich
| Parameter | LTC2145CUP-12 | LTC2216IUP |
|---|---|---|
| Marke | Analog Devices | Analog Devices |
| Kategorie | ADC/DAC | ADC/DAC |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $26,40 | $37,80 |
| Auflösung | 12 bits | 16 bits |
| Sample Rate | 125 Msps | — |
| Number of Channels | 2 (simultaneous sampling) | 1 |
| Architecture | Pipelined with on-chip S/H | Pipelined |
| Analog Supply Voltage | 1.8 V (single supply) | — |
| Digital I/O Supply | 1.2 V to 1.8 V (separate supply) | — |
| Analog Input Type | Differential | — |
| INL (typical) | ±0.3 LSB | — |
| DNL (typical) | ±0.1 LSB (no missing codes over temperature) | — |
| Transition Noise | 0.3 LSB RMS | — |
| SNR | 70.6 dB | — |
| SFDR | 89 dB | — |
| Aperture Jitter | 0.08 ps RMS | 85 fsRMS |
| Output Modes | Full-rate CMOS, DDR CMOS, DDR LVDS (selectable) | — |
| Betriebstemperaturbereich | 0 °C to +70 °C (C grade) | -40°C to +85°C (industrial, I suffix) |
| Gehäuse | 64-QFN EP (9 mm x 9 mm, exposed pad) | 64-pin QFN (UP) 9x9 mm with EP |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant (#PBF suffix indicates lead-free RoHS) | Compliant (#PBF suffix) |
| Sampling Rate (max) | — | 80 Msps |
| Input Range | — | 2.75 Vp-p differential (fixed) |
| Input Frequency (max, specified) | — | 400 MHz |
| SNR at 30 MHz input | — | 81 dB |
| SFDR at 30 MHz input | — | 96 dB |
| INL (max) | — | ±3.5 LSB |
| DNL (max) | — | ±1 LSB (no missing codes) |
| Analog Supply (AVDD) | — | 3.3 V |
| Digital Supply (OVDD) | — | 1.8 V |
| Power Consumption (80 Msps) | — | 760 mW (typical) |
| Output Interface | — | CMOS or LVDS-compatible DDR |
| Internal Dither | — | Optional (improved SFDR) |